- Vgs - Gate-Source Voltage :
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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Fall Time | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
86,500
In-stock
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Infineon Technologies | MOSFET TRENCH 40<-<100V | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 214 W | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 143 nC | 31 ns | TSON-8 | 5000 | Green available | ||||||||||
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1,010
In-stock
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Fairchild Semiconductor | MOSFET PT9 30V/12V Nch PowerTrench SyncFET | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 30 V | 38 A | 1.09 mOhms | 3 V | 143 nC | Enhancement | ||||||||||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 80V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 240 A | 6 mOhms | 2 V | 143 nC | Enhancement | ||||||||||
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219
In-stock
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IXYS | MOSFET MOSFET 650V/80A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 80 A | 40 mOhms | 2.7 V | 143 nC | Enhancement | ||||||||||
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10,760
In-stock
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IR / Infineon | MOSFET 100V 170A 4.7 mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.7 mOhms | 4 V | 143 nC | |||||||||||
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260
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 64 A | 51 mOhms | 3 V | 143 nC | Enhancement | ||||||||||
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2,148
In-stock
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IR / Infineon | MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 4 V | 143 nC | |||||||||||
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326
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 180A 4.7mOhm 143nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 143 nC | ||||||||||||||
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500
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 10 hm, 143 nC Qg, D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 143 nC | Enhancement | |||||||||||
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VIEW | STMicroelectronics | MOSFET N-CH 650V 0.037Ohm 58A | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 710 V | 58 A | 37 mOhms | 4 V | 143 nC | MDmesh | ||||||||||
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VIEW | Infineon Technologies | MOSFET 100V 170A 4.7 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 143 nC |