- Manufacture :
- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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327
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 188 nC | Enhancement | |||
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792
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1700V, 72A | - 5 V, + 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 72 A | 45 mOhms | 2 V | 188 nC | Enhancement | |||
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42
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.055 Ohm 49A FDmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49 A | 65 mOhms | 188 nC |
