- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Siliconix / Vishay | MOSFET P Ch -100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 93 A | 0.0155 Ohms | - 2.5 V | 350 nC | Enhancement | |||
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VIEW | STMicroelectronics | MOSFET N-Channel 650V 93A 0.019 Ohm Mdmesh M5 | 25 V | Through Hole | Max247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 96 A | 19 mOhms | 4 V | 350 nC |
