- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,791
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 140mOhms 9.5nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 2 A | 140 mOhms | 2 V | 9.5 nC | Enhancement | ||||
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12,777
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 13A 10mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 10.5 mOhms | 1.8 V | 9.5 nC | |||||
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10,376
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 165 mOhms | 9.5 nC | ||||||||
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9,194
In-stock
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IR / Infineon | MOSFET 55V, Logic level 2A 140 mOhm Auto MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | Si | N-Channel | 55 V | 2 A | 140 mOhms | 9.5 nC | |||||||||
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3,900
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | |||||
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10,175
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 165 mOhms | 9.5 nC | ||||||||
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59,790
In-stock
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IR / Infineon | MOSFET MOSFT 55V 2A 140mOhm 9.5nC LogLvl | 16 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 2 A | 280 mOhms | 9.5 nC | ||||||||
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3,578
In-stock
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onsemi | MOSFET T6 60V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13.3 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
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1,586
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
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1,579
In-stock
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IR / Infineon | MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | ||||||||
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790
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | |||||
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1,315
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.7 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
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9,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 1.8A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.8 A | 3 Ohms | 9.5 nC | CoolMOS | |||||
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1,343
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | ||||
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1,461
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm | - 8 V, + 18 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Reel | 1 Channel | SiC | N-Channel | 900 V | 11 A | 385 mOhms | 1.8 V | 9.5 nC | Enhancement | ||||
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197
In-stock
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Wolfspeed / Cree | MOSFET G3 SiC MOSFET 900V, 280mOhm | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 900 V | 11.5 A | 280 mOhms | 2.1 V | 9.5 nC | Enhancement | |||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.5 A | 98 mOhms | - 3 V | 9.5 nC | Enhancement | ||||
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5,000
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.7 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
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915
In-stock
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STMicroelectronics | MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 2.8 Ohms | 4 V | 9.5 nC | |||||
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2,134
In-stock
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Toshiba | MOSFET N-Ch 30V FET 9A 15W 690pF 9.5nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 33 mOhms | 9.5 nC | |||||||||
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2,206
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1.2 A | 6.7 Ohms | 3.75 V | 9.5 nC | Enhancement | SuperMesh | |||
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2,270
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 25mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | Enhancement | |||||
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669
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 13 mOhms | 9.5 nC | Enhancement |
