- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,000
In-stock
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IXYS | MOSFET SMD N-CHANNEL POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | ||||
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213
In-stock
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IXYS | MOSFET High Voltage Power MOSFET; 2500V, 0.2A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | ||||||
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2,712
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 850mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.4 Ohms | 2.5 V | 7.4 nC | Enhancement | SuperFET II | |||
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1,692
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 3400 mOhm Zener embedded, IPAK PKG | 20 V, 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.4 Ohms | 2.5 V | 7.4 nC | Enhancement | SuperFET II | |||
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2,186
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 10A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 14.6 mOhms | 2.55 V | 7.4 nC | |||||
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1,534
In-stock
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IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 10 A | 18.3 mOhms | 7.4 nC | Enhancement |
