- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,206
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 570 mOhms | 3 V | 4 nC | Enhancement | ||||
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2,687
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | ||||
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1,515
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | ||||
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17,176
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 | +/- 25 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 4 nC | Enhancement | ||||
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1,041
In-stock
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Nexperia | MOSFET P-CH -20 V -1.2 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 1.2 A | 210 mOhms | 4 nC | ||||||||||
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2,230
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 96pF 4nC | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 210 mA | 6 Ohms | 3 V | 4 nC | Enhancement | PowerDI | |||
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38
In-stock
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onsemi | MOSFET NFET SO8FL 30V | SMD/SMT | SO-FL-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 17.1 A | 4.5 mOhms | 1.63 V | 4 nC | ||||||||
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3,977
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 12.1 mOhms | 1.3 V | 4 nC | NexFET | ||||
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2,886
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 9.5 mOhms | 2 V | 4 nC | Enhancement | NexFET | |||
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1,833
In-stock
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onsemi | MOSFET NCH 4V Power MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 35 V | 3 A | 208 mOhms | 1.2 V | 4 nC | Enhancement | ||||
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2,998
In-stock
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onsemi | MOSFET NCH 4V Power MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 35 V | 2.5 A | 201 mOhms | 1.2 V | 4 nC | Enhancement |
