- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
-
- DirectFET-M4 (1)
- DirectFET-MN (1)
- DirectFET-MX (3)
- HSOF-8 (1)
- Power-56-8 (1)
- PowerPAK-1212-8W (1)
- PowerPAK-SO-8L-4 (4)
- SO-8 (3)
- SO-FL-8 (1)
- SOP-Advance-8 (1)
- TDSON-8 (8)
- TO-220-3 (15)
- TO-220F-3 (1)
- TO-220FP-3 (2)
- TO-247-3 (6)
- TO-247-4 (1)
- TO-252-3 (7)
- TO-262-3 (2)
- TO-263-3 (10)
- TO-263-7 (1)
- TSDSON-8 (6)
- VSON-4 (2)
- VSONP-8 (3)
- WDFN-8 (1)
- WDSON-2-3 (2)
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10.8 A (1)
- 10.3 A (1)
- 100 A (5)
- 105 A (1)
- 107 A (1)
- 110 A (1)
- 12 A (3)
- 13 A (3)
- 13.7 A (5)
- 15 A (2)
- 16 A (1)
- 160 A (2)
- 18 A (6)
- 19 A (1)
- 190 A (1)
- 20 A (7)
- 213 A (1)
- 23 A (1)
- 24 A (1)
- 25 A (2)
- 30 A (1)
- 35 A (3)
- 40 A (6)
- 45 A (2)
- 46 A (2)
- 48 A (1)
- 5.4 A (1)
- 58 A (4)
- 59 A (1)
- 6.3 A (1)
- 60 A (1)
- 63 A (1)
- 65 A (1)
- 68 A (1)
- 70 A (2)
- 73 A (1)
- 76 A (1)
- 80 A (4)
- 9 A (1)
- 90 A (1)
- 98 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.0065 Ohms (1)
- 1.2 mOhms (1)
- 1.3 Ohms (1)
- 1.6 Ohms (1)
- 10.2 mOhms (1)
- 10.3 mOhms (1)
- 10.5 mOhms (2)
- 10.7 mOhms (2)
- 10.8 mOhms (1)
- 11 mOhms (3)
- 11.2 mOhms (1)
- 11.3 mOhms (1)
- 111 mOhms (6)
- 115 mOhms (2)
- 13 mOhms (2)
- 13.1 mOhms (2)
- 13.5 mOhms (1)
- 14.8 mOhms (1)
- 140 mOhms (1)
- 15.5 mOhms (1)
- 150 mOhms (4)
- 2.2 mOhms (2)
- 2.3 mOhms (1)
- 2.4 mOhms (1)
- 2.5 mOhms (2)
- 2.7 mOhms (3)
- 210 mOhms (4)
- 220 mOhms (8)
- 228 mOhms (1)
- 260 mOhms (3)
- 3.2 mOhms (1)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 4 mOhms (1)
- 4.2 mOhms (5)
- 4.8 mOhms (1)
- 43 mOhms (1)
- 44 mOhms (1)
- 5.7 mOhms (1)
- 6 mOhms (1)
- 65 mOhms (2)
- 7 mOhms (1)
- 7.8 mOhms (1)
- 7.9 mOhms (1)
- 8 mOhms (1)
- 8.4 mOhms (2)
- 9 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
84 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,518
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 10.5 mOhms | 2 V | 35 nC | Enhancement | ||||
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2,995
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V PowerPAK 1212-8W | +/- 20 V | SMD/SMT | PowerPAK-1212-8W | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 16 A | 0.0065 Ohms | 1.5 V | 35 nC | Enhancement | ||||
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2,235
In-stock
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Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 73 A | 7.9 mOhms | 2 V | 35 nC | Enhancement | ||||
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1,600
In-stock
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Fairchild Semiconductor | MOSFET N-CH/900V/8A/QFET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 6.3 A | 1.6 Ohms | 5 V | 35 nC | Enhancement | QFET | |||
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4,205
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10.3 A | 10.3 mOhms | 4.8 V | 35 nC | Enhancement | Directfet | |||
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8,442
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
|
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7,471
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | |||
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GET PRICE |
61,440
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 98 A | 2.5 mOhms | 1.2 V | 35 nC | Enhancement | |||
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4,820
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | |||||
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4,375
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 76 A | 9 mOhms | 3 V | 35 nC | Enhancement | OptiMOS | |||
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GET PRICE |
13,960
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | ||||
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3,426
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 45 A | 13.1 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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2,900
In-stock
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Infineon Technologies | MOSFET 60VAUTO GRADE 1 N-CH HEXFET 7mOhms | 20 V | SMD/SMT | DirectFET-M4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 68 A | 7 mOhms | 35 nC | Enhancement | |||||
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4,847
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 13 mOhms | 1.1 V | 35 nC | Enhancement | OptiMOS | |||
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1,909
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 15A VSON-4 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
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4,836
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.2 mOhms | 1.2 V | 35 nC | Enhancement | OptiMOS | |||
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1,970
In-stock
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Fairchild Semiconductor | MOSFET 60/20V 90A N-chnl PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 11.3 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||
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4,389
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
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1,800
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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906
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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2,476
In-stock
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onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | ||||
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536
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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1,384
In-stock
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onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 107 A | 4.8 mOhms | 1.2 V | 35 nC | Enhancement | ||||
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1,382
In-stock
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Fairchild Semiconductor | MOSFET MV7 N Channel Power Trench MosFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 65 A | 15.5 mOhms | 2 V | 35 nC | Enhancement | PowerTrench | |||
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400
In-stock
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Fairchild Semiconductor | MOSFET 60V SG N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 10.8 mOhms | 2 V | 35 nC | Enhancement | ||||
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523
In-stock
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onsemi | MOSFET 100V HD3E NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 44 mOhms | 2 V | 35 nC | |||||
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1,401
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 4.2 mOhms | 1 V | 35 nC | Enhancement | OptiMOS | |||
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782
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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414
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 0.27 ohm 13A MDmesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 260 mOhms | 35 nC | ||||||
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278
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS |
