- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
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- DirectFET-M4 (1)
- Power-56-8 (2)
- PowerDI3333-8 (2)
- POWERDI5060-8 (2)
- PQFN-8 (4)
- SO-8 (6)
- SO-FL-8 (3)
- SOP-8 (1)
- SOP-Advance-8 (1)
- SOT-223-4 (5)
- SOT-23-3 (1)
- TDSON-8 (4)
- TO-220-3 (8)
- TO-220FP-3 (8)
- TO-247-3 (2)
- TO-251-3 (1)
- TO-252-3 (11)
- TO-262-3 (1)
- TO-263-3 (2)
- TO-281-3 (2)
- TO-3PN-3 (1)
- TSON-Advance-8 (1)
- U-DFN2020-F-6 (2)
- VSONP-8 (3)
- WLCSP-6 (1)
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- - 5.3 A (1)
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- 56 A (1)
- 57 A (1)
- 6.5 A (1)
- 6.6 A (1)
- 7 A (1)
- 75 A (1)
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- 8.9 A (2)
- 86 A (4)
- 87 A (2)
- 9 A (3)
- Rds On - Drain-Source Resistance :
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- 1.2 Ohms (1)
- 1.25 Ohms (1)
- 1.3 mOhms (1)
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- 16 mOhms (4)
- 17.6 mOhms (1)
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- 19.5 mOhms (3)
- 2 Ohms (2)
- 2.5 Ohms (1)
- 200 mOhms (2)
- 220 mOhms (2)
- 28 mOhms (2)
- 3.7 mOhms (1)
- 3.7 Ohms (1)
- 34 mOhms (1)
- 350 mOhms (1)
- 370 mOhms (3)
- 378 mOhms (4)
- 380 mOhms (7)
- 385 mOhms (1)
- 399 mOhms (2)
- 4.8 mOhms (1)
- 430 mOhms (2)
- 5.6 mOhms (2)
- 5.9 mOhms (1)
- 6 mOhms (1)
- 6.5 mOhms (2)
- 6.8 mOhms (4)
- 7 mOhms (1)
- 7.8 mOhms (2)
- 8.2 mOhms (2)
- 92 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
76 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
46,499
In-stock
|
AOS / Alpha & Omega Semiconductor | MOSFET N-Ch 30V 0.006 Ohm 11A STripFET VI Deep | - 20 V, + 20 V | Tape & Reel (TR) | 50 W | N-Channel | 30 V | 11 A | 6 mOhms | 1 V | 17 nC | PowerFLAT-3.3x3.3-8 | 3000 | Green available | ||||||||||
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334
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 350 mOhms | 2 V | 17 nC | Enhancement | ||||||||
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13,131
In-stock
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IR / Infineon | MOSFET MOSFT 100V 1.6A 200mOhm 17nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 200 mOhms | 17 nC | ||||||||||||
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14,838
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 1.8A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.8 A | 220 mOhms | 800 mV | 17 nC | Enhancement | ||||||||
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8,444
In-stock
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Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10 A | 13 mOhms | 0.9 V | 17 nC | PowerTrench | ||||||||
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14,970
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 78A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 3.7 mOhms | 17 nC | OptiMOS | |||||||||
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4,653
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 19.5 mOhms | 2 V | 17 nC | Enhancement | OptiMOS | |||||||
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6,312
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 370 mOhms | 2 V | 17 nC | Enhancement | |||||||||
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5,727
In-stock
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onsemi | MOSFET NFET SO8FL 60V 26A 24MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 18 mOhms | 2.5 V | 17 nC | |||||||||
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941
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | ||||||||
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2,286
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 378 mOhms | 2 V | 17 nC | Enhancement | ||||||||
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1,490
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 378 mOhms | 2 V | 17 nC | Enhancement | |||||||||
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4,694
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC | 20 V | SMD/SMT | SO-8 | Tube | 1 Channel | Si | N-Channel | 30 V | 18 A | 6.8 mOhms | 17 nC | ||||||||||||
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2,750
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17.6 A | 34 mOhms | 1.9 V | 17 nC | UltraFET | ||||||||
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1,996
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.6 A | 28 mOhms | 17 nC | PowerTrench | |||||||||||
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2,304
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 14mOhms 17nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 14 mOhms | 17 nC | Enhancement | |||||||||
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871
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | |||||||||
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1,050
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 378 mOhms | 2 V | 17 nC | Enhancement | |||||||||
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4,220
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10.6 A | 16 mOhms | 2.5 V | 17 nC | Enhancement | ||||||||
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600
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 17 nC | Enhancement | ||||||||
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1,180
In-stock
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onsemi | MOSFET T5 100V LL S08FL | 16 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 19 mOhms | 1 V | 17 nC | Enhancement | ||||||||
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914
In-stock
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onsemi | MOSFET T5 100V LL S08FL | 16 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 19 mOhms | 1 V | 17 nC | Enhancement | ||||||||
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998
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 378 mOhms | 2 V | 17 nC | Enhancement | |||||||||
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3,131
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 54 A | 4.8 mOhms | 17 nC | StrongIRFET | |||||||||||
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2,375
In-stock
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STMicroelectronics | MOSFET N-CH 525 V 4.4 A SuperMESH3 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.2 Ohms | 17 nC | ||||||||||
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582
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 3 V | 17 nC | Enhancement | ||||||||
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5,460
In-stock
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Fairchild Semiconductor | MOSFET 30V 22A 10mOhms N-Ch PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 22 A | 10 mOhms | 2 V | 17 nC | |||||||||
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40,000
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 18A 4.8mOhm 17nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 6.8 mOhms | 17 nC | ||||||||||||
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1,328
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 19.5 mOhms | 2 V | 17 nC | Enhancement | OptiMOS | |||||||
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492
In-stock
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Fairchild Semiconductor | MOSFET 600V NChannel MOSFET UniFET-II | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.5 A | 1.25 Ohms | 5 V | 17 nC | Enhancement | UniFET |
