- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,642
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 16 A | 51 mOhms | 2.9 V | 6 nC | PowerTrench | ||||
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7,179
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 30V 9.7A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC | ||||||||
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37,775
In-stock
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onsemi | MOSFET NCH 2.5V COMMON-DRAIN | 12.5 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V | 10 A | 11.6 mOhms | 6 nC | ||||||
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9,067
In-stock
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Diodes Incorporated | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.7 A | 30 mOhms | 1.7 V | 6 nC | Enhancement | ||||
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6,320
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -150V -0.7A 2400mOhm 6nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 700 mA | 2.4 Ohms | 6 nC | ||||||||
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5,040
In-stock
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Fairchild Semiconductor | MOSFET N-Channel UniFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1.1 Ohms | 5 V | 6 nC | |||||
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5,848
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 620 mA | 620 mOhms | - 2 V | 6 nC | Enhancement | ||||
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1,594
In-stock
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STMicroelectronics | MOSFET N-Ch 450V 3.2 ohm 1.8 A SuperMESH3 | 3 V | SMD/SMT | SOT-223-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 600 mA | 3.8 Ohms | 4.5 V | 6 nC | ||||||
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2,644
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 48 mOhms | 1 V | 6 nC | Enhancement | |||||
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2,861
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 35 mOhms | 2.1 V | 6 nC | Enhancement | ||||
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3,355
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 4.68 Ohms | 2.5 V | 6 nC | Enhancement | CoolMOS | |||
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2,465
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 4 A | 33 mOhms | - 1.1 V | 6 nC | Enhancement | ||||
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236,500
In-stock
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Nexperia | MOSFET PMV65UNE/TO-236AB/REEL 7 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.4 A | 63 mOhms | 450 mV | 6 nC | Enhancement | ||||
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GET PRICE |
46,170
In-stock
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Texas instruments | MOSFET 30V N-Chnl MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 11.8 mOhms | 1.6 V | 6 nC | NexFET | |||
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5,820
In-stock
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Texas instruments | MOSFET 20V Dual N ch MOSFET | 10 V | SMD/SMT | PicoStar-4 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7 A | 36 mOhms | 680 mV | 6 nC | Enhancement | ||||
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3,610
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 580 mOhms | 800 mV | 6 nC | Enhancement | ||||
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2,500
In-stock
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Texas instruments | MOSFET 20V Dual N ch MOSFET | 10 V | SMD/SMT | PicoStar-4 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 7 A | 36 mOhms | 680 mV | 6 nC | Enhancement | ||||
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2,854
In-stock
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STMicroelectronics | MOSFET N-CH 20V 0.025Ohm 23A STripFET V | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 30 mOhms | 0.7 V | 6 nC | |||||
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24,000
In-stock
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Nexperia | MOSFET P-CH -20 V -2 A | SMD/SMT | SOT-23-3 | Reel | Si | P-Channel | - 20 V | - 2 A | 120 mOhms | 6 nC | ||||||||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 22 mOhms | 1.2 V | 6 nC | Enhancement | ||||
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4,370
In-stock
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Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 11 mOhms | 1.7 V | 6 nC | NexFET | ||||
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2,339
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | 20 V | SMD/SMT | SO-8 | Tube | 2 Channel | Si | N-Channel | 30 V | 9.7 A | 21.6 mOhms | 6 nC | ||||||||
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2,128
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement | ||||
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1,460
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 2.4A IPAK-3 | 20 V | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 2 Ohms | 3 V | 6 nC | CoolMOS | |||||
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1,564
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.8 Ohms | 2.5 V | 6 nC | Enhancement |
