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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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523
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 47A 10mOhm 65.3nC LogLvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 47 A | 18 mOhms | 65.3 nC | ||||||||
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262
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 77 A | 10 mOhms | 65.3 nC | ||||||||
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102
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 10mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 10 mOhms | 65.3 nC | Enhancement | ||||||
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73
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 10mOhms 65.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 10 mOhms | 1 V to 2 V | 65.3 nC | Enhancement |