- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
22 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | RoHS | |
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GET PRICE |
86,500
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A USON-6 | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 78 W | Si | N-Channel | 30 V | 50 A | 1 MOhms | 1.2 V | 81 nC | USON-6 | Green available | |||||||||
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6,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V MICRO FOOT | +/- 8 V | SMD/SMT | MicroFoot-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.7 A | 0.017 Ohms | - 0.9 V | 81 nC | Enhancement | ||||||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench SyncFET | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 17 A | 5.7 mOhms | 81 nC | PowerTrench SyncFET | ||||||||||
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3,347
In-stock
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Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-MF | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 135 A | 2.3 mOhms | 2.2 V | 81 nC | Enhancement | StrongIRFET | |||||||
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276
In-stock
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 2 V | 81 nC | Enhancement | ||||||||
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GET PRICE |
60,200
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 65A 9.3mOhm 83nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC | ||||||||||||
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797
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 64A 14mOhm 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 4 V | 81 nC | |||||||||
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688
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.3 mOhms | 3.7 V | 81 nC | StrongIRFET | ||||||||
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36
In-stock
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IR / Infineon | MOSFET MOSFT 100V 80A 15mOhm 81nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | ||||||||||||
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509
In-stock
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Toshiba | MOSFET 100V N-Ch PWR FET 148A 192W 5400pF | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 148 A | 4 mOhms | 81 nC | ||||||||||
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70
In-stock
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Toshiba | MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK | 20 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 136 A | 3.8 mOhms | 4 V | 81 nC | Enhancement | ||||||||
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167
In-stock
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Toshiba | MOSFET MOSFET NCh 3.7ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 72 A | 3.7 mOhms | 2 V to 4 V | 81 nC | Enhancement | ||||||||
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150
In-stock
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Toshiba | MOSFET 80V N-Ch PWR FET 157A 192W 81nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 80 V | 157 A | 4.3 mOhms | 81 nC | |||||||||||||
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6
In-stock
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Texas instruments | MOSFET 60V N-Ch NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 1.6 mOhms | 1.4 V | 81 nC | Enhancement | ||||||||
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2,143
In-stock
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Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 2 mOhms | 1.9 V | 81 nC | Enhancement | NexFET | |||||||
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187
In-stock
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Texas instruments | MOSFET 60V, N-Channel NexFET Power MOSFET 3-DDPAK/TO-... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 2 mOhms | 1.9 V | 81 nC | Enhancement | NexFET | |||||||
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500
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 80A 15mOhm 81nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | ||||||||||||
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150
In-stock
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Toshiba | MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 65 A | 4 mOhms | 2 V to 4 V | 81 nC | Enhancement | |||||||||
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800
In-stock
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onsemi | MOSFET NFET 60V .016R TR | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 11.5 mOhms | 2 V | 81 nC | Enhancement | ||||||||
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VIEW | Infineon Technologies | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 114 A | 3.5 mOhms | 81 nC | Enhancement | |||||||||
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84
In-stock
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IR / Infineon | MOSFET 100V N-CH HEXFET 15mOhms 81nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | Enhancement | |||||||||
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59
In-stock
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IR / Infineon | MOSFET MOSFT 100V 97A 9.3mOhm 81nC | 30 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 100 V | 43 A | 7.9 mOhms | 81 nC |