- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 100 mOhms (1)
- 105 mOhms (2)
- 11.1 mOhms (1)
- 120 mOhms (1)
- 13.8 mOhms (1)
- 15.5 mOhms (2)
- 160 mOhms (3)
- 168 mOhms (2)
- 18 mOhms (1)
- 18.2 mOhms (1)
- 180 mOhms (2)
- 22 mOhms (1)
- 22.8 mOhms (1)
- 4.1 Ohms (1)
- 4.3 Ohms (1)
- 4.5 Ohms (1)
- 48 mOhms (2)
- 5.1 Ohms (2)
- 50 mOhms (2)
- 6 mOhms (1)
- 74 mOhms (2)
- 8 Ohms (1)
- 8.5 Ohms (1)
- 80 mOhms (1)
- 83.5 mOhms (1)
- 90 mOhms (1)
- 96 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
14,930
In-stock
|
STMicroelectronics | MOSFET 600V 8Ohm 1A N-Chnnl Zener SuperMESH | 30 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 400 mA | 8.5 Ohms | 7 nC | Enhancement | |||||
|
|
7,129
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 13 A | 74 mOhms | 2 V | 7 nC | Enhancement | OptiMOS | |||
|
|
2,691
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
|
|
5,559
In-stock
|
STMicroelectronics | MOSFET N-Ch 450 Volt 0.4 A | 30 V | SMD/SMT | SOIC-8 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 450 V | 400 mA | 4.1 Ohms | 7 nC | Enhancement | |||||
|
|
4,919
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 13 A | 74 mOhms | 2 V | 7 nC | Enhancement | OptiMOS | |||
|
|
2,656
In-stock
|
Fairchild Semiconductor | MOSFET 30V NCh PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 11.1 mOhms | 3 V | 7 nC | PowerTrench | ||||
|
|
GET PRICE |
32,420
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 1.0Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1 A | 8 Ohms | 7 nC | Enhancement | ||||
|
|
5,720
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 1.9A 160mOhm 7nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | ||||||||
|
|
1,199
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 28A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 28 A | 18 mOhms | 7 nC | Enhancement | OptiMOS | ||||
|
|
2,290
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 13.8 mOhms | 2.25 V | 7 nC | Enhancement | ||||
|
|
2,134
In-stock
|
IR / Infineon | MOSFET Automotive MOSFET 55 MOSFET 55V 60mOhm | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | Si | N-Channel | 55 V | 5 A | 48 mOhms | 3 V | 7 nC | Enhancement | |||||
|
|
2,901
In-stock
|
STMicroelectronics | MOSFET N-Ch, 450V-4.1ohms 1.5A | 30 V | Through Hole | TO-251-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 450 V | 1.5 A | 4.5 Ohms | 7 nC | Enhancement | |||||
|
|
383
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate | 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
|
|
3,804
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 20V N-Chan | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 90 mOhms | 400 mV | 7 nC | Enhancement | ||||
|
|
2,021
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 160mOhms 7nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | Enhancement | |||||
|
|
755
In-stock
|
STMicroelectronics | MOSFET N/P-Ch 30V 8/5 Amp | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 8 A | 22 mOhms | 2.5 V | 7 nC | Enhancement | ||||
|
|
1,414
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 43 A | 18.2 mOhms | 7 nC | Enhancement | |||||
|
|
775
In-stock
|
Infineon Technologies | MOSFET Automotive MOSFET 55V, 1.9A, 160 mOhm | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.7 A | 160 mOhms | 4 V | 7 nC | |||||
|
|
2,421
In-stock
|
onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-323-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2 A | 105 mOhms | 1.2 V | 7 nC | Enhancement | |||||
|
|
199
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 60mOhms 7nC | 16 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 5 A | 100 mOhms | 7 nC | Enhancement | |||||
|
|
128
In-stock
|
IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | |||
|
|
114
In-stock
|
IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | |||
|
|
3,182
In-stock
|
Toshiba | MOSFET Small Signal Mosfet | 20 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 83.5 mOhms | 1.8 V | 7 nC | Enhancement | |||||
|
|
405
In-stock
|
Toshiba | MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | 30 V | Through Hole | PW-Mold2-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.3 Ohms | 2.4 V | 7 nC | Enhancement | ||||
|
|
5,998
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS 31V-40 SOT26,3K | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.7 A | 80 mOhms | 7 nC | Enhancement | |||||
|
|
2,500
In-stock
|
onsemi | MOSFET T6 60V LL DPAK | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 22.8 mOhms | 1.2 V | 7 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Fairchild Semiconductor | MOSFET GATE OX, 60V, NCH, .120MO (6V), TRENCH | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.7 A | 120 mOhms | 2.4 V | 7 nC | |||||
|
|
VIEW | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT363,3K | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.8 A | 48 mOhms | 7 nC | Enhancement | |||||
|
|
VIEW | Toshiba | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 96 mOhms | 4 V | 7 nC | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET UMOSVIII 250V 205m (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 168 mOhms | 4 V | 7 nC | Enhancement |
