- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.07 Ohms (1)
- 1.1 Ohms (1)
- 1.15 Ohms (1)
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- 100 mOhms (2)
- 11 mOhms (1)
- 110 mOhms (2)
- 14 mOhms (1)
- 15 mOhms (1)
- 15.9 mOhms (1)
- 163 mOhms (3)
- 2.6 mOhms (2)
- 2.7 mOhms (1)
- 22 mOhms (1)
- 240 mOhms (2)
- 28 mOhms (1)
- 280 mOhms (4)
- 3.2 mOhms (1)
- 3.6 mOhms (1)
- 380 mOhms (1)
- 4.1 mOhms (1)
- 4.2 mOhms (2)
- 4.4 mOhms (1)
- 5.9 mOhms (2)
- 59 mOhms (1)
- 6 mOhms (1)
- 6.8 mOhms (1)
- 60 mOhms (2)
- 7.4 mOhms (1)
- 8.3 mOhms (5)
- 850 mOhms (3)
- 9 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
53 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,397
In-stock
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Siliconix / Vishay | MOSFET N-Channel 150V SO-8 | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 0.07 Ohms | 2.5 V | 33 nC | Enhancement | ||||
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4,703
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | |||
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12,234
In-stock
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IR / Infineon | MOSFET MOSFT PCh -150V -2.2A 240mOhm 33nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | 33 nC | ||||||||
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2,345
In-stock
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IR / Infineon | MOSFET MOSFT 80V 39A 28mOhm 22nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 28 mOhms | 2.5 V | 33 nC | |||||
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2,478
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Chan SyncFET PowerTrench | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 3.6 mOhms | 1.9 V | 33 nC | PowerTrench SyncFET | ||||||
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7,061
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 52 A | 15 mOhms | 4 V | 33 nC | PowerTrench | ||||
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5,791
In-stock
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IR / Infineon | MOSFET MOSFT 40V 18A 5mOhm 33nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 18 A | 5.9 mOhms | 33 nC | ||||||||
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3,942
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -18.6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.6 A | 100 mOhms | - 4 V | 33 nC | Enhancement | SIPMOS | |||
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8,510
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 99 A | 6.8 mOhms | 2.5 V | 33 nC | Enhancement | ||||
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6,795
In-stock
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IR / Infineon | MOSFET MOSFT 100V 4.5A 60mOhm 33nC | 30 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 33 nC | ||||||||
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3,066
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 60mOhms 33nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 5.5 V | 33 nC | Enhancement | ||||
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2,380
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | ||||||
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994
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | |||||
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2,907
In-stock
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Fairchild Semiconductor | MOSFET PT8 30V/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 19 A | 3.2 mOhms | 1.9 V | 33 nC | Enhancement | PowerTrench SyncFET | |||
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3,551
In-stock
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Fairchild Semiconductor | MOSFET PT8PZ 30/25V VIS with 2.05x2.05 PQFN pkg | 25 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11 mOhms | - 2.6 V | 33 nC | Enhancement | PowerTrench | |||
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2,464
In-stock
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IR / Infineon | MOSFET 1 P-CH -150V HEXFET 240mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 240 mOhms | - 5 V | 33 nC | Enhancement | ||||
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1,328
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 18 A | 5.9 mOhms | 33 nC | Enhancement | |||||
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1,526
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 99 A | 8.3 mOhms | 33 nC | ||||||||
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748
In-stock
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Fairchild Semiconductor | MOSFET 200V3.9A 70OHMNCH ULTRAFET TRENCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.9 A | 59 mOhms | 33 nC | UltraFET | |||||
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1,809
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -2.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.9 A | 110 mOhms | - 4 V | 33 nC | Enhancement | ||||
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440
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.23 O typ., 16 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 16 A | 280 mOhms | 4 V | 33 nC | Enhancement | |||||
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1,657
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12.5 A | 10 mOhms | - 2.5 V | 33 nC | Enhancement | ||||
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270
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power ... | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 20 A | 163 mOhms | 2 V | 33 nC | Enhancement | |||||
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1,593
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 52 A | 10 mOhms | - 2.5 V | 33 nC | Enhancement | |||||
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2,500
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -18.6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.6 A | 100 mOhms | - 4 V | 33 nC | Enhancement | ||||
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1,896
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.6 mOhms | 1 V | 33 nC | Enhancement | OptiMOS | |||
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257
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 380 mohm 650V FRFET | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 10.2 A | 380 mOhms | 5 V | 33 nC | SuperFET II FRFET | ||||
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1,176
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -2.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.9 A | 110 mOhms | - 4 V | 33 nC | Enhancement | ||||
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13,770
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.6 mOhms | 1 V | 33 nC | Enhancement | OptiMOS | |||
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1,383
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.1 mOhms | 4 V | 33 nC | Enhancement | OptiMOS |
