- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
32 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
52,390
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 5.2A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 50 mOhms | 13.3 nC | |||||||||
|
2,875
In-stock
|
IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 185 mOhms | 13.3 nC | Enhancement | |||||||
|
2,462
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 70mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 70 mOhms | 13.3 nC | |||||||||
|
3,146
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC | Enhancement | ||||||
|
3,015
In-stock
|
Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 50 mOhms | 13.3 nC | Enhancement | ||||||
|
2,450
In-stock
|
IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 185 mOhms | 13.3 nC | Enhancement | |||||||
|
190,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 16A 75mOhm 13.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 16 A | 75 mOhms | 13.3 nC | |||||||||
|
13,330
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 17A 70mOhm 13.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 70 mOhms | 13.3 nC | |||||||||
|
1,716
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC | Enhancement | ||||||
|
1,174
In-stock
|
Infineon Technologies | MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | |||||||||
|
1,530
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC | |||||||||
|
1,539
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | Enhancement | ||||||
|
1,092
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 7.7A 180mOhm 13.3nC LogLv | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 7.7 A | 260 mOhms | 13.3 nC | |||||||||
|
1,451
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 13A 70mOhm 13.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 13 A | 70 mOhms | 13.3 nC | |||||||||
|
1,524
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 16A 75mOhm 13.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 16 A | 75 mOhms | 13.3 nC | |||||||||
|
1,180
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | |||||
|
1,379
In-stock
|
IR / Infineon | MOSFET Gen 10.7 FredFet 500V 1.5Ohm | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.75 Ohms | 13.3 nC | |||||||||
|
534
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 70mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 17 A | 70 mOhms | 13.3 nC | |||||||||
|
328
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | |||||||||
|
135
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC | |||||||||
|
2,232
In-stock
|
Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 3.7 mOhms | 1.6 V | 13.3 nC | Enhancement | NexFET | ||||
|
1,795
In-stock
|
Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 3.3 mOhms | 1.6 V | 13.3 nC | Enhancement | NexFET | ||||
|
3,273
In-stock
|
Texas instruments | MOSFET DualCool N-Channel NexFET Power MOSFET | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 3.3 mOhms | 1.6 V | 13.3 nC | NexFET | |||||
|
4,344
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 75mOhms 13.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 16 A | 75 mOhms | 13.3 nC | Enhancement | ||||||
|
236,800
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 16A 75mOhm 13.3nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 16 A | 75 mOhms | 13.3 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 20 V | 4.3 A | 50 mOhms | 13.3 nC | Enhancement | ||||||
|
VIEW | Infineon Technologies | MOSFET 55V 25A 43 mOhm Auto Logic Level MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 13.3 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 17 A | 75 mOhms | 13.3 nC | |||||||||
|
16
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | |||||
|
VIEW | IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 185 mOhms | 13.3 nC | Enhancement |