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17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,410
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.9 mOhms | 2.2 V | 74 nC | Enhancement | ||||
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2,382
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | Enhancement | |||||
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4,930
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 1 V | 74 nC | Enhancement | OptiMOS | |||
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2,042
In-stock
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IR / Infineon | MOSFET MOSFT 75V 42A 26mOhm 74nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | ||||||||
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1,179
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.1 mOhms | 1 V | 74 nC | Enhancement | OptiMOS | |||
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477
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 4 V | 74 nC | Enhancement | ||||
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54
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | |||
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35
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | |||
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3,470
In-stock
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Toshiba | MOSFET N-CH Mosfet 30V 150A 8DSOP | 20 V | SMD/SMT | DSOP-Advance-8 | - | - | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 1 MOhms | 1.3 V | 74 nC | Enhancement | ||||
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2,089
In-stock
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=132W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 150 A | 2.1 mOhms | 1.4 V | 74 nC | Enhancement | ||||
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2,142
In-stock
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onsemi | MOSFET 8-64MHZ 3.3V GP EMI | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 123 A | 2.9 mOhms | 3.5 V | 74 nC | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | ||||||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 1.1 mOhms | 1.3 V to 2.3 V | 74 nC | Enhancement | ||||
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12,000
In-stock
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Toshiba | MOSFET N-Ch 30V FET 48A 63W 5200pF 74nC | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 2.7 mOhms | 74 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | ||||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | ||||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC |
