- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 1.2 mOhms (1)
- 1.25 mOhms (1)
- 1.4 mOhms (7)
- 1.5 mOhms (2)
- 1.9 mOhms (1)
- 13 mOhms (1)
- 195 mOhms (1)
- 2 mOhms (2)
- 2.1 mOhms (2)
- 2.3 mOhms (6)
- 2.4 mOhms (8)
- 2.5 mOhms (6)
- 2.8 mOhms (2)
- 23 mOhms (1)
- 3.2 mOhms (1)
- 3.3 mOhms (2)
- 3.5 mOhms (1)
- 3.7 mOhms (3)
- 300 mOhms (1)
- 4 mOhms (7)
- 55 mOhms (1)
- 7.8 mOhms (2)
- 90 mOhms (2)
- Tradename :
- Applied Filters :
61 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5,092
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS | ||||
|
384
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | ||||
|
645
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 1.25mOhms 160nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 400 A | 90 mOhms | 160 nC | |||||||||
|
1,040
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 4 V | 160 nC | ||||||
|
1,128
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 3mOhms 160nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 2.5 mOhms | 160 nC | |||||||||
|
2,662
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | |||||||||
|
737
In-stock
|
Infineon Technologies | MOSFET 75V 230A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.5 mOhms | 160 nC | |||||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 2.5 V | 160 nC | Enhancement | |||||
|
2,990
In-stock
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement | |||||||
|
GET PRICE |
68,250
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | ||||||||
|
70,700
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 210A 3.3mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 210 A | 2.8 mOhms | 160 nC | |||||||||
|
918
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 100A 7.8mOhm 160nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 7.8 mOhms | 160 nC | |||||||||
|
1,145
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 3.5 mOhms | 4 V | 160 nC | ||||||
|
499
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 210A 3.3mOhm 160nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 200 A | 2.8 mOhms | 160 nC | |||||||||
|
388
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 230A 3mOhm 160nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 230 A | 2.5 mOhms | 160 nC | |||||||||
|
640
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 240A 1.2mOhm 160nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 400 A | 90 mOhms | 160 nC | Enhancement | |||||||
|
616
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 300A 1.9mOhm 110nC LogLv7 | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 1.9 mOhms | 2.5 V | 160 nC | ||||||||
|
1,507
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.3 mOhms | - 2 V | 160 nC | Enhancement | |||||
|
67
In-stock
|
IXYS | MOSFET 24 Amps 500V 0.30 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 300 mOhms | 5 V | 160 nC | Enhancement | |||||
|
GET PRICE |
39,200
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2 mOhms | 160 nC | ||||||||
|
330
In-stock
|
Infineon Technologies | MOSFET MOSFT 24V 353A 1.5mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 24 V | 353 A | 1.2 mOhms | 160 nC | |||||||||
|
98
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2.3 mOhms | 160 nC | Enhancement | ||||||
|
331
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | ||||||
|
291
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 160 nC | ||||||||||
|
627
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | |||||
|
272
In-stock
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement | |||||||
|
175
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 98A 23mOhm 160nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 98 A | 23 mOhms | 160 nC | Enhancement | ||||||
|
155
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 206A 3.7mOhm 160nC | 20 V | Through Hole | TO-273-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 206 A | 3.7 mOhms | 160 nC | |||||||||
|
222
In-stock
|
Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 353 A | 1.5 mOhms | 160 nC | Enhancement | |||||||
|
264
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 280A 2.3mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2.3 mOhms | 160 nC |