- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
37 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,699
In-stock
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Fairchild Semiconductor | MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.4 mOhms | 3.3 V | 75 nC | Enhancement | PowerTrench | |||
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1,097
In-stock
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Fairchild Semiconductor | MOSFET 600V 29A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 125 mOhms | 2.5 V | 75 nC | Enhancement | SuperFET II | |||
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3,740
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 22 mOhms | 75 nC | ||||||||
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1,535
In-stock
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IR / Infineon | MOSFET MOSFT 30V 200A 3mOhm 75nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 200 A | 4 mOhms | 75 nC | ||||||||
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16,286
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 12 A | 17 mOhms | - 0.4 V to - 1 V | 75 nC | Enhancement | ||||
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864
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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763
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 13.5 A Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.5 A | 500 mOhms | 75 nC | Enhancement | |||||
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988
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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2,519
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 13.5mOhms 75nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 22 mOhms | 75 nC | Enhancement | |||||
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752
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 200 A | 4 mOhms | 75 nC | ||||||||
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3,510
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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571
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 160 mOhms | 3 V | 75 nC | CoolMOS | ||||
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2,486
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.5 mOhms | 1 V | 75 nC | Enhancement | ||||
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2,805
In-stock
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Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 16 A | 0.014 Ohms | - 1 V | 75 nC | Enhancement | TrenchFET | |||
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170
In-stock
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IXYS | MOSFET MOSFET 650V/46A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 76 mOhms | 2.7 V | 75 nC | Enhancement | HiPerFET | |||
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289
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 200A 3.1mOhm 75nC LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC | ||||||||
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774
In-stock
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Infineon Technologies | MOSFET MOSFET N CH 60V 95A TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 95 A | 4.9 mOhms | 3.7 V | 75 nC | StrongIRFET | ||||
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402
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.1mOhms 75nC | 16 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC | ||||||||
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88
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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300
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | ||||||
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280
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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322
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | ||||||
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170
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 4.1 mOhms | 2.2 V | 75 nC | Enhancement | NexFET | |||
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2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N-Channel 80V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 60 A | 5.8 mOhms | 1.5 V | 75 nC | Enhancement | ||||
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1,903
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 90 A | 2.5 mOhms | 1 V | 75 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | SMD/SMT | TO-263-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | ||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement | ||||
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650
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3mOhms 75nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 260 A | 3 mOhms | 2.5 V | 75 nC | Enhancement |
