- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 0.014 Ohms (1)
- 0.0285 Ohms (1)
- 0.035 Ohms (1)
- 1.5 mOhms (1)
- 1.8 mOhms (2)
- 10.5 mOhms, 10.5 mOhms (1)
- 11 mOhms (1)
- 15.2 mOhms (1)
- 150 mOhms (2)
- 18 mOhms (2)
- 2.3 mOhms (1)
- 2.7 mOhms (2)
- 20 mOhms (2)
- 200 mOhms (2)
- 210 mOhms (1)
- 22 mOhms (1)
- 3 mOhms (2)
- 3.3 mOhms (1)
- 3.8 mOhms (1)
- 30 mOhms (2)
- 4 mOhms (1)
- 47 mOhms (2)
- 5.5 mOhms (2)
- 5.6 mOhms (2)
- 5.7 mOhms (2)
- 58 mOhms (1)
- 6.7 mOhms (2)
- 600 mOhms (1)
- 650 mOhms (2)
- 9.9 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
44 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Factory Pack Quantity | RoHS | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
46,520
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 100 W | N-Channel | 100 V | 51.7 A | 22 mOhms | 1 V | 21 nC | 2500 | Green available | ||||||||||
|
3,755
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
2,458
In-stock
|
IR / Infineon | MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | Enhancement | ||||||||||
|
19,440
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -150V -27A 150mOhm 21nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 27 A | 150 mOhms | 21 nC | |||||||||||||
|
3,169
In-stock
|
Fairchild Semiconductor | MOSFET 100V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 39 A, 39 A | 10.5 mOhms, 10.5 mOhms | 3 V | 21 nC | Enhancement | PowerTrench Power Clip | ||||||||
|
6,303
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 7.6A 26mOhm 21nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | |||||||||||||
|
7,413
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 6.7 mOhms | 1 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
4,027
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | |||||||||
|
10,370
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
GET PRICE |
43,220
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||||||
|
4,425
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 20 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
4,109
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
5,069
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 39A 15MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 39 A | 15.2 mOhms | 1.5 V | 21 nC | ||||||||||
|
4,775
In-stock
|
Infineon Technologies | MOSFET 150V AUTO GRD 1 N-CH HEXFET DIRECTFET M2 | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 47 mOhms | 21 nC | Enhancement | ||||||||||
|
3,825
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | SIPMOS | ||||||||
|
2,955
In-stock
|
IR / Infineon | MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 7.6 A | 30 mOhms | 21 nC | Enhancement | ||||||||||
|
3,975
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
2,030
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms | 21 nC | |||||||||||
|
840
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 27 A | 58 mOhms | 5 V | 21 nC | ||||||||||
|
2,065
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6.7 A | 650 mOhms | 3 V | 21 nC | CoolMOS | |||||||||
|
4,720
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 6.7 mOhms | 1 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
2,720
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
758
In-stock
|
Fairchild Semiconductor | MOSFET 500V 10A N-Chan Ultra FRFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 650 mOhms | 5 V | 21 nC | UniFET FRFET | |||||||||||
|
1,311
In-stock
|
Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 4.2mOhms 21nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 20 V | 120 A | 5.7 mOhms | 1.55 V to 2.45 V | 21 nC | Enhancement | |||||||||
|
1,246
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | ||||||||
|
1,760
In-stock
|
Vishay Semiconductors | MOSFET 30V 8A 5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8 A | 0.014 Ohms | 1.5 V | 21 nC | Enhancement | TrenchFET | ||||||||
|
2,700
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.8 A | 0.035 Ohms | - 2.5 V | 21 nC | Enhancement | TrenchFET | ||||||||
|
2,249
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | |||||||||
|
2,955
In-stock
|
Nexperia | MOSFET PMPB47XP/SOT1220/REEL 7" Q1/T1 | +/- 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 47 mOhms | - 900 mV | 21 nC | Enhancement | |||||||||
|
49
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement |