- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
36 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
8,600
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0012 Ohm typ 120 A STripFET F7 Power M... | - 20 V, + 20 V | Tape & Reel (TR) | 187 W | N-Channel | 60 V | 260 A | 1.2 mOhms | 2 V | 100 nC | PowerFLAT-5x6-8 | 3000 | Green available | ||||||||||
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GET PRICE |
28,010
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 56A 18mOhm 69nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 4 V | 100 nC | ||||||||||
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12,000
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | |||||||||
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GET PRICE |
177,900
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 76A 20mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 76 A | 20 mOhms | 100 nC | Enhancement | ||||||||
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657
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||||||
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2,935
In-stock
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IR / Infineon | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 190 A | 2.7 mOhms | 100 nC | ||||||||||||
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1,775
In-stock
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Vishay Semiconductors | MOSFET -40V 75A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 75 A | 0.0028 Ohms | 1.5 V | 100 nC | Enhancement | TrenchFET | |||||||
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266
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET SWITCH | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 18.6 mOhms | 100 nC | ||||||||||||
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1,389
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 8 mOhms | 2 V | 100 nC | Enhancement | ||||||||
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3,078
In-stock
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Nexperia | MOSFET PMPB15XP/SOT1220/REEL 7" Q1/T1 | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.8 A | 15 mOhms | - 900 mV | 100 nC | Enhancement | ||||||||
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790
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 4 V | 100 nC | Enhancement | ||||||||
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556
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 100 nC | Enhancement | ||||||||
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4,399
In-stock
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onsemi | MOSFET NCH+NCH 2.5V DRIVE S | 8 V | SMD/SMT | CSP-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 27 A | 6.3 mOhms | 500 mV | 100 nC | Enhancement | |||||||||
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795
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 4.6 mOhms | 1.5 V | 100 nC | Enhancement | ||||||||
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2,765
In-stock
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Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 36 A | 21 mOhms | - 2.5 V | 100 nC | Enhancement | ||||||||
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970
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 4.7 mOhms | 100 nC | OptiMOS | |||||||||
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329
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53.5 A | 63 mOhms | 3.5 V | 100 nC | Enhancement | CoolMOS | |||||||
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1,100
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 100 nC | Enhancement | ||||||||||
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29
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | ||||||||
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249
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 100 nC | Enhancement | ||||||||||
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70
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | LinearL2 | ||||||||
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175
In-stock
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Infineon Technologies | MOSFET HIGH POWER PRICE/PERFORM | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53.5 A | 63 mOhms | 3.5 V | 100 nC | Enhancement | CoolMOS | |||||||
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200
In-stock
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IR / Infineon | MOSFET MOSFT 200V 76A 23.2mOhm 100nC | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||||||
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178
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 140 A | 8 mOhms | 100 nC | Enhancement | ||||||||||
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152
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.7mOhms 100nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 190 A | 3.7 mOhms | 100 nC | Enhancement | |||||||||
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1,000
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 42 A MDmes... | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 42 A | 63 mOhms | 3 V | 100 nC | Enhancement | ||||||||
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100
In-stock
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STMicroelectronics | MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | N-Channel | 950 V | 38 A | 0.12 Ohms | 3 V | 100 nC | Enhancement | |||||||||
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100
In-stock
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STMicroelectronics | MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MO... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 38 A | 0.12 Ohms | 3 V | 100 nC | Enhancement | ||||||||
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250
In-stock
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IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-252-3 | Tube | Si | N-Channel | 200 V | 72 A | 100 nC | ||||||||||||||
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VIEW | IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 100 nC | Enhancement | HyperFET |
