- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,430
In-stock
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Infineon Technologies | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.1 A, - 2 A | 70 mOhms, 190 mOhms | 1.2 V, - 2 V | 22.5 nC, 20 nC | Enhancement | ||||
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1,693
In-stock
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Infineon Technologies | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 60 V | 3.1 A, - 2 A | 70 mOhms, 190 mOhms | 1.2 V, - 2 V | 22.5 nC, 20 nC | Enhancement | SIPMOS | |||
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5,965
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 1.4 A, - 1.5 A | 119 mOhms, 113 mOhms | 1.2 V, - 2 V | 600 pC, - 2.4 nC | Enhancement | ||||
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1,852
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 1.4 A, - 1.5 A | 119 mOhms, 113 mOhms | 1.2 V, - 2 V | 600 pC, - 2.4 nC | Enhancement |
