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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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211
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IXYS | MOSFET 175V 150A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 175 V | 150 A | 12 mOhms | 2.5 V to 4.5 V | 63 nC | Enhancement | ||||
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GET PRICE |
19,630
In-stock
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STMicroelectronics | MOSFET N-channel 80 V, 0.0058 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.5 mOhms | 2.5 V to 4.5 V | 150 nC | Enhancement | |||
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85
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 100V 75A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 2.5 V to 4.5 V | 215 nC | Enhancement | ||||
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304
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.9 mOhms | 2.5 V to 4.5 V | 120 nC | Enhancement | |||||
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250
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.7 mOhms | 2.5 V to 4.5 V | 120 nC | Enhancement | ||||
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18
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 360 A | 2.9 mOhms | 2.5 V to 4.5 V | 525 nC | Enhancement | HiPerFET |
