- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,955
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC | 8 V, 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 5.6 A, 5.6 A | 17 mOhms, 17 mOhms | 400 mV, 400 mV | 19.6 nC, 19.6 nC | Enhancement | |||
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6,605
In-stock
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onsemi | MOSFET NFET XLLGA6 20V 200M | 8 V, 8 V | SMD/SMT | XLLGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 200 mA, 200 mA | 800 mOhms, 800 mOhms | 400 mV, 400 mV | Enhancement | ||||
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3,589
In-stock
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Toshiba | MOSFET Small Signal MOSFET | 10 V, 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 180 mA, 180 mA | 20 Ohms, 20 Ohms | 400 mV, 400 mV | Enhancement |
