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3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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4,172
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 8 V | SMD/SMT | SOT-416-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 840 mOhms | 0.4 V to 1 V | 1 nC | ||||
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5,600
In-stock
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Toshiba | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS | 12 V | SMD/SMT | uDFN-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 4 A | 82 mOhms | 0.4 V to 1 V | 3.2 nC | ||||||
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1,127
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 109 mOhms | 0.4 V to 1 V | 2.2 nC |