- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 10.1 mOhms, 10.1 mOhms (2)
- 116 mOhms, 116 mOhms (1)
- 120 mOhms, 120 mOhms (2)
- 2.4 mOhms, 700 uOhms (2)
- 2.5 mOhms, 900 uOhms (1)
- 21 mOhms, 21 mOhms (4)
- 27 mOhms, 27 mOhms (1)
- 3.8 mOhms, 2.1 mOhms (2)
- 3.8 mOhms, 2.8 mOhms (2)
- 3.9 mOhms, 1.2 mOhms (2)
- 31 mOhms, 31 mOhms (2)
- 4.2 mOhms, 4.2 mOhms (2)
- 6.3 mOhms, 6.3 mOhms (1)
- 7.2 mOhms, 7.2 mOhms (2)
- 95 mOhms, 95 mOhms (1)
- Tradename :
- Applied Filters :
27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
19,594
In-stock
|
Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 16 V, 16 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A, 50 A | 2.4 mOhms, 700 uOhms | 1.2 V, 1.2 V | 8.4 nC, 29 nC | Enhancement | |||||
|
21,351
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.2 mOhms, 7.2 mOhms | 1.2 V, 1.2 V | 39 nC, 39 nC | Enhancement | OptiMOS | ||||
|
GET PRICE |
17,192
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | OptiMOS | |||
|
51,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 1.2 mOhms | 1.2 V, 1.2 V | 8.9 nC, 33 nC | Enhancement | |||||
|
4,007
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
|
56,750
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
|
2,793
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 40 A, 40 A | 2.5 mOhms, 900 uOhms | 1.2 V, 1.2 V | 12 nC, 37 nC | Enhancement | |||||
|
4,680
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 20 A, 20 A | 21 mOhms, 21 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | |||||
|
25,040
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.9 mOhms, 1.2 mOhms | 1.2 V, 1.2 V | 8.9 nC, 33 nC | Enhancement | OptiMOS | ||||
|
1,904
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | OptiMOS | ||||
|
2,414
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.8 mOhms | 1.2 V, 1.2 V | 10 nC, 12.8 nC | Enhancement | |||||
|
790
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 16 V, 16 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 50 A, 50 A | 2.4 mOhms, 700 uOhms | 1.2 V, 1.2 V | 8.4 nC, 29 nC | Enhancement | |||||
|
2,400
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | |||||
|
1,978
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 6.3 mOhms, 6.3 mOhms | 1.2 V, 1.2 V | 35 nC, 35 nC | Enhancement | |||||
|
2,575
In-stock
|
onsemi | MOSFET NCH+NCH 4V DRIVE SERIES | 20 V, 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 3 A, 3 A | 116 mOhms, 116 mOhms | 1.2 V, 1.2 V | 10 nC, 10 nC | Enhancement | |||||
|
224
In-stock
|
onsemi | MOSFET NCH+NCH 4.5A 60V 4V DRIVE | 20 V, 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 4.5 A, 4.5 A | 95 mOhms, 95 mOhms | 1.2 V, 1.2 V | 14 nC, 14 nC | Enhancement | |||||
|
1,393
In-stock
|
Texas instruments | MOSFET 30 V Dual N-Channel NexFET Power MOSFETs | 20 V, 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 5.0 A | 27 mOhms, 27 mOhms | 1.2 V, 1.2 V | 6 nC, 6 nC | Enhancement | NexFET | ||||
|
GET PRICE |
4,990
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.6A SO-8 | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 2.6 A, 2.6 A | 120 mOhms, 120 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | SIPMOS | |||
|
GET PRICE |
24,930
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.6A SO-8 | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 2.6 A, 2.6 A | 120 mOhms, 120 mOhms | 1.2 V, 1.2 V | 20 nC, 20 nC | Enhancement | OptiMOS | |||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.1 mOhms | 1.2 V, 1.2 V | 10 nC, 18.4 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.8 mOhms | 1.2 V, 1.2 V | 10 nC, 12.8 nC | Enhancement | OptiMOS | ||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 7.2 mOhms, 7.2 mOhms | 1.2 V, 1.2 V | 39 nC, 39 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | OptiMOS | ||||
|
VIEW | Infineon Technologies | MOSFET N-CHANNEL_30/40V | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 20 A, 20 A | 10.1 mOhms, 10.1 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | CoolMOS | ||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 3.8 mOhms, 2.1 mOhms | 1.2 V, 1.2 V | 10 nC, 18.4 nC | Enhancement | OptiMOS |