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21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,668
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.5 A | 1 Ohms | 3 V to 5 V | 14 nC | UniFET FRFET | ||||
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1,698
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 330 mOhms | 3 V to 5 V | 17.8 nC | SupreMOS | ||||
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3,600
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET, FRFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 76 A | 36 mOhms | 3 V to 5 V | 277 nC | SuperFET II FRFET | ||||
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5,028
In-stock
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Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | ||||
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314
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 7 A | 1.9 Ohms | 3 V to 5 V | 47 nC | Enhancement | ||||
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329
In-stock
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STMicroelectronics | MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 12 A | 690 mOhms | 3 V to 5 V | 44.2 nC | Enhancement | |||||
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1,040
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 620mohm / 600V, FRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 620 mOhms | 3 V to 5 V | 20 nC | SuperFET II FRFET | ||||
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917
In-stock
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Fairchild Semiconductor | MOSFET UNIFET2 500V N-CH MOSFET SINGLE GAGE | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.5 A | 460 mOhms | 3 V to 5 V | 23 nC | UniFET | ||||
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934
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7 A | 850 mOhms | 3 V to 5 V | 14 nC | UniFET | ||||
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769
In-stock
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Fairchild Semiconductor | MOSFET 600V, N-Channel MOSFET, UniFET-II | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.65 Ohms | 3 V to 5 V | 10 nC | UniFET | |||||
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996
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.2 A | 1.57 Ohms | 3 V to 5 V | 9 nC | UniFET | ||||
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354
In-stock
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Fairchild Semiconductor | MOSFET UniFET1 300V N-Channel MOSFET, D2PAK | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 38 A | 103 mOhms | 3 V to 5 V | 56 nC | Enhancement | UniFET FRFET | |||
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348
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 78mOhms 25nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 77.5 mOhms | 3 V to 5 V | 25 nC | Enhancement | ||||
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1,649
In-stock
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Infineon Technologies | MOSFET 500V 3.5A 2.2Ohm MotIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6 A | 1.05 Ohms | 3 V to 5 V | 34 nC | Enhancement | ||||
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11
In-stock
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STMicroelectronics | MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 14 A | 900 mOhms | 3 V to 5 V | 89 nC | Enhancement | |||||
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40
In-stock
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IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 540 mOhms | 3 V to 5 V | 25 nC | Enhancement | HyperFET | |||
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30
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 20 A | 300 mOhms | 3 V to 5 V | 36 nC | Enhancement | HyperFET | ||||
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3,001
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel UniFET-II | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.9 A | 1.7 Ohms | 3 V to 5 V | 9 nC | UniFET FRFET | ||||
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VIEW | Toshiba | MOSFET N-Ch MOS 40A 600V 320W 3400pF 0.08 | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 40 A | 65 mOhms | 3 V to 5 V | 55 nC | Enhancement | ||||
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857
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 43mOhms 25nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 43 mOhms | 3 V to 5 V | 25 nC | Enhancement | ||||
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256
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 42mOhms 26nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 3 V to 5 V | 26 nC | Enhancement |
