- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 2.7 mOhms (2)
- 22 mOhms (1)
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- 28 Ohms (2)
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- 3.7 mOhms (1)
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- 4.6 mOhms (3)
- 45 mOhms (1)
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- 8.8 mOhms (1)
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- 9.1 mOhms (1)
- 9.3 mOhms (1)
- 9.4 mOhms (1)
- Qg - Gate Charge :
-
- 0.74 nC (1)
- 1 nC (1)
- 10 nC (2)
- 10.3 nC (1)
- 13.2 nC (1)
- 139 nC (1)
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- 18.6 nC (1)
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- 5.1 nC (1)
- 5.6 nC (3)
- 5.8 nC (2)
- 6.6 nC (4)
- 600 pC (2)
- 74 nC (1)
- 740 pC (2)
- 78 nC (1)
- 8.3 nC (1)
- 8.9 nC (1)
- 9 nC (1)
- 9.2 nC (1)
- 98 nC (2)
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- Applied Filters :
57 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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12,500
In-stock
|
NXP Semiconductors | MOSFET PSMN022-30PL/SOT78/SIL3P | - 20 V, + 20 V | Tube | 1 Channel | 41 W | N-Channel | 30 V | 30 A | 22 mOhms | 1.3 V | 9 nC | TO-220 | 1000 | Green available | |||||||||||
|
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3,601
In-stock
|
Fairchild Semiconductor | MOSFET PT9 N-ch 30V/12V Power Trench MOSFET | 12 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 1.23 mOhms | 1.3 V | 78 nC | Enhancement | Power Clip | ||||||||
|
|
16,279
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 3.2A SOT-89-3 | +/- 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.2 A | 47 mOhms | 1.3 V | 5.6 nC | Enhancement | |||||||||
|
|
8,972
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 78A 3.4MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 78 A | 2.7 mOhms | 1.3 V | 30 nC | Enhancement | |||||||||
|
|
4,500
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 138A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 136 A | 1.5 mOhms | 1.3 V | 45.2 nC | Enhancement | |||||||||
|
|
33,632
In-stock
|
onsemi | MOSFET NCH+NCH 2.5V DRIVE SERIES | 12.5 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V | 11 A | 9.1 mOhms | 1.3 V | 10 nC | ||||||||||
|
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5,475
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 5.8 A | 45 mOhms | 1.3 V | 37.56 nC | Enhancement | |||||||||
|
|
8,073
In-stock
|
Nexperia | MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.1 A | 46 mOhms | 1.3 V | 19 nC | Enhancement | |||||||||
|
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2,766
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 120mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 120 mA | 25 Ohms | 1.3 V | 6.6 nC | Enhancement | |||||||||
|
|
25,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | |||||||||
|
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4,102
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 67 A | 3.4 mOhms | 1.3 V | 36 nC | Enhancement | |||||||||
|
|
2,777
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 120mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 120 mA | 25 Ohms | 1.3 V | 6.6 nC | Enhancement | |||||||||
|
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4,694
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh 30Vds 20Vgs 1415pF 25.1nC | 20 V, 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37.8 A | 16 mOhms | 1.3 V | 25.1 nC | Enhancement | |||||||||
|
|
6,298
In-stock
|
Diodes Incorporated | MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 470 mA | 2.4 Ohms | 1.3 V | 740 pC | Enhancement | |||||||||
|
|
39,900
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 69A 4MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 69 A | 3.2 mOhms | 1.3 V | 26 nC | Enhancement | |||||||||
|
|
1,490
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 78A 3.4MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21.7 A | 2.7 mOhms | 1.3 V | 14 nC | Enhancement | |||||||||
|
|
4,441
In-stock
|
onsemi | MOSFET Pwr MOSFET 30V 38A 9.4mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 38 A | 7.5 mOhms | 1.3 V | 15..2 nC | Enhancement | |||||||||
|
|
1,815
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 4.5A TSOP-6 | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | |||||||||
|
|
6,493
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.406 Ohms | 1.3 V | 600 pC | Enhancement | |||||||||
|
|
1,494
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 120mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 120 mA | 25 Ohms | 1.3 V | 6.6 nC | Enhancement | |||||||||
|
|
25,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | |||||||||
|
|
3,854
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 190 mA | 2.406 Ohms | 1.3 V | 600 pC | Enhancement | |||||||||
|
|
4,656
In-stock
|
Diodes Incorporated | MOSFET 60V Enh Mode FET 12Vgss 470mA 610mW | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 470 mA | 2.4 Ohms | 1.3 V | 740 pC | Enhancement | |||||||||
|
|
2,821
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 46A 6.96MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 5.8 mOhms | 1.3 V | 18.6 nC | Enhancement | |||||||||
|
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1,734
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vdss 1.5W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.3 A | 8 mOhms | 1.3 V | 25.1 nC | Enhancement | |||||||||
|
|
3,567
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss SOT23 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 470 mA | 2.4 Ohms | 1.3 V | 0.74 nC | Enhancement | |||||||||
|
|
7,608
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNALN-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 5 Ohms | 1.3 V | 1 nC | Enhancement | |||||||||
|
|
1,500
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 138A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 159 A | 1.4 mOhms | 1.3 V | 45.2 nC | Enhancement | |||||||||
|
|
1,193
In-stock
|
onsemi | MOSFET NFET U8FL 30V 47A 7.4MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 5.9 mOhms | 1.3 V | 19.3 nC | Enhancement | |||||||||
|
|
2,720
In-stock
|
Nexperia | MOSFET PMV230ENEA/TO-236AB/REEL 7" Q3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.5 A | 176 mOhms | 1.3 V | 4.8 nC | Enhancement |
