- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,057
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 33 mOhms | - 1.1 V | 14.4 nC | Enhancement | PowerDI | |||
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4,990
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.2 A | 75 mOhms | - 1.1 V | 14.4 nC | Enhancement | ||||
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940
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 10 A | 8.2 mOhms | - 1.1 V | 8.1 nC | Enhancement | ||||
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6,618
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 X2-DFN1006-3 T&R 10K | +/- 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 450 mOhms | - 1.1 V | 1.5 nC | Enhancement | ||||
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2,465
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 4 A | 33 mOhms | - 1.1 V | 6 nC | Enhancement | ||||
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9,179
In-stock
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Texas instruments | MOSFET P-Channel MOSFET | +/- 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.5 A | 66 mOhms | - 1.1 V | 1.35 nC | Enhancement | NexFET | |||
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1,118
In-stock
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Texas instruments | MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA | - 6 V | SMD/SMT | DSBGA-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 3 A | 16.2 mOhms | - 1.1 V | 6.3 nC | Enhancement | NexFET | |||
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20,600
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -20V -2.6A 135mOhm -2.5V cpbl | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 157 mOhms | - 1.1 V | 2.9 nC | |||||
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VIEW | Diodes Incorporated | MOSFET P-Ch Enh Mode FET 33mOhm -20V -5.8A | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 28 mOhms | - 1.1 V | 5.4 nC | Enhancement |
