- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1 A (1)
- - 1.17 A (2)
- - 1.5 A (7)
- - 1.5 A, - 1.5 A (1)
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- - 2 A (4)
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- - 200 mA (1)
- - 260 mA (2)
- - 3 A (1)
- - 330 mA (3)
- - 35 A (1)
- - 360 mA (1)
- - 4 A (1)
- - 4.5 A (1)
- - 4.8 A (1)
- - 430 mA (2)
- - 5.5 A (3)
- - 50 A (3)
- - 6.3 A (1)
- - 620 mA (1)
- - 680 mA (2)
- - 70 A (1)
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- - 9.7 A (2)
- - 90 A (2)
- - 96 A (1)
- 16 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.125 Ohms (1)
- 1 Ohms (1)
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- 113 mOhms (3)
- 13 mOhms (1)
- 130 mOhms (1)
- 130 mOhms, 130 mOhms (1)
- 136 mOhms (1)
- 140 mOhms (2)
- 15 mOhms (1)
- 2.2 Ohms (1)
- 20 Ohms (1)
- 200 mOhms (2)
- 210 mOhms (3)
- 230 mOhms (1)
- 230 mOhms, 230 mOhms (1)
- 240 mOhms (1)
- 25 mOhms (1)
- 27 mOhms (1)
- 3 Ohms (2)
- 3.3 mOhms (2)
- 3.7 mOhms (2)
- 300 mOhms (1)
- 31 mOhms (2)
- 33 mOhms (1)
- 36 mOhms (1)
- 4.6 Ohms (3)
- 5 mOhms (1)
- 5.6 mOhms (2)
- 5.7 mOhms (3)
- 5.8 Ohms (5)
- 50 mOhms (1)
- 500 mOhms (2)
- 6.9 mOhms (1)
- 62 mOhms (3)
- 620 mOhms (1)
- 7.5 Ohms (2)
- 7.7 Ohms (2)
- 8 Ohms (1)
- 9 Ohms (1)
- Qg - Gate Charge :
-
- - 0.2 nC (1)
- - 0.7 nC (1)
- - 0.7 nC, - 0.7 nC (1)
- - 1.2 nC, - 1.2 nC (1)
- - 126 nC (3)
- - 15.1 nC (2)
- - 2.3 nC (3)
- - 2.9 nC (3)
- - 20 nC (3)
- - 29 nC (2)
- - 4.8 nC (1)
- - 5 nC (3)
- - 5.4 nC (2)
- - 6.1 nC (2)
- - 6.4 nC (2)
- 1.5 nC (8)
- 10.5 nC (2)
- 12.4 nC (1)
- 12.8 nC (1)
- 160 nC (4)
- 180 nC (1)
- 199 nC (1)
- 20.9 nC (1)
- 21 nC (2)
- 26 nC (1)
- 3.57 nC (3)
- 34 nC (1)
- 47.5 nC (2)
- 5.2 nC (1)
- 5.3 nC (1)
- 5.9 nC (1)
- 6 nC (1)
- 6.5 nC (1)
- 60.4 nC (1)
- 62 nC (2)
- 63 nC (1)
- 7.8 nC (1)
- 8.3 nC (1)
- 80 nC (2)
- 900 pC (1)
- 91 nC (1)
- Channel Mode :
- Tradename :
- Applied Filters :
76 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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33,217
In-stock
|
Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
|
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5,092
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | - 16 V, + 5 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 3.7 mOhms | - 2 V | 160 nC | Enhancement | OptiMOS | |||
|
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5,377
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | OptiMOS | |||
|
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2,406
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | SIPMOS | |||
|
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1,987
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 50 A | 5.7 mOhms | - 2 V | - 126 nC | Enhancement | ||||
|
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47,027
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
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4,106
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -1.17A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.17 A | 500 mOhms | - 2 V | 5.2 nC | Enhancement | ||||
|
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3,762
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | ||||
|
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3,825
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | SIPMOS | |||
|
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2,194
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 70 A | 5 mOhms | - 2 V | 91 nC | Enhancement | ||||
|
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3,170
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 1.9A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 210 mOhms | - 2 V | - 20 nC | Enhancement | ||||
|
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16,416
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
|
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2,180
In-stock
|
Diodes Incorporated | MOSFET P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A | +/- 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.1 A | 15 mOhms | - 2 V | 47.5 nC | Enhancement | ||||
|
|
3,587
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V 1A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1 Ohms | - 2 V | 12.4 nC | Enhancement | ||||
|
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GET PRICE |
15,130
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 80 A | 5.6 mOhms | - 2 V | 80 nC | Enhancement | OptiMOS | ||
|
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3,703
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -1.17A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.17 A | 500 mOhms | - 2 V | 7.8 nC | Enhancement | ||||
|
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5,848
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 620 mA | 620 mOhms | - 2 V | 6 nC | Enhancement | ||||
|
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1,248
In-stock
|
Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | ||||
|
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2,627
In-stock
|
onsemi | MOSFET PFET 60V 15.5A 130R | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15.5 A | 130 mOhms | - 2 V | 26 nC | Enhancement | ||||
|
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1,507
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -90A DPAK-2 OptiMOS-P2 | 5 V, - 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.3 mOhms | - 2 V | 160 nC | Enhancement | ||||
|
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20,433
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V 150mA SOT-323-3 | +/- 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 150 mA | 4.6 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
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23,299
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
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15,516
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
|
2,959
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
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1,228
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 360 mA | 2.2 Ohms | - 2 V | 5.3 nC | Enhancement | ||||
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10,312
In-stock
|
Infineon Technologies | MOSFET P-Ch SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
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261
In-stock
|
IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V | 180 nC | Enhancement | ||||
|
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10,229
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -330mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 330 mA | 1.4 Ohms | - 2 V | 3.57 nC | Enhancement | ||||
|
|
3,028
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -2A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 62 mOhms | - 2 V | - 5 nC | Enhancement | ||||
|
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9,355
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V -1.5A SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.5 A | 113 mOhms | - 2 V | - 2.3 nC | Enhancement |
