- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,997
In-stock
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Vishay Semiconductors | MOSFET -12V Vds -60A Id AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 60 A | 4.8 mOhms | - 1.5 V | 150 nC | Enhancement | ||||
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12,192
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 0.08 Ohms | - 1.5 V | 8 nC | Enhancement | TrenchFET | |||
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25,410
In-stock
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Fairchild Semiconductor | MOSFET 20V Single P Channel PowerTrench Mosfet | +/- 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.8 A | 45 mOhms | - 1.5 V | 30 nC | PowerTrench | ||||
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2,195
In-stock
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Vishay Semiconductors | MOSFET 40V 17.3A 7.14W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 17.3 A | 0.011 Ohms | - 1.5 V | 115 nC | Enhancement | TrenchFET | |||
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3,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 32 A | 0.005 Ohms | - 1.5 V | 164 nC | Enhancement | TrenchFET | |||
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2,331
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -45A TO220-3 OptiMOS-P2 | + 5 V, - 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 45 A | 9 mOhms | - 1.5 V | 42 nC | Enhancement | OptiMOS | |||
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5,962
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 12 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 0.08 Ohms | - 1.5 V | 5.5 nC | Enhancement | TrenchFET | |||
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1,852
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 140 mA | 11 Ohms | - 1.5 V | - 3.6 nC | Enhancement | ||||
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5,334
In-stock
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Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 35 mOhms | - 1.5 V | 15.4 nC | Enhancement | ||||
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2,340
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 14.4 nC | Enhancement | ||||
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1,012
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 85 mOhms | - 1.5 V | 7.8 nC | Enhancement | ||||
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5,134
In-stock
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Toshiba | MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW | 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.4 Ohms | - 1.5 V | ||||||
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4,830
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh FET 25Vgss -100A 1.3W | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 1.5 V | 47.5 nC | Enhancement | ||||
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2,980
In-stock
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Nexperia | MOSFET PMPB27EP/SOT1220/REEL 7" Q1/T1 | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.8 A | 24 mOhms | - 1.5 V | 30 nC | Enhancement | |||||
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10,000
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 25 nC | Enhancement |
