- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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14,500
In-stock
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Fairchild Semiconductor | MOSFET PT8P 20_8V from vanguard | 8 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 56 A | 20 mOhms | - 400 mV | 44 nC | Enhancement | PowerTrench | ||||
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4,262
In-stock
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Fairchild Semiconductor | MOSFET PT8P 20/8V power PQFN33 with cu wire | 8 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 56 A | 11.5 mOhms | - 400 mV | 87 nC | Enhancement | PowerTrench | ||||
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2,615
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | +/- 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 85 nC | Enhancement | PowerDI | ||||
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5,684
In-stock
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Nexperia | MOSFET 20 V, P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.9 A | 950 mOhms | - 400 mV | 6.8 nC | Enhancement | |||||
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1,704
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss PPAP | +/- 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 156 nC | Enhancement | PowerDI | ||||
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5,298
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 300 mA | 900 mOhms | - 400 mV | 0.7 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 42 A | 12.5 mOhms | - 400 mV | 103 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 42 A | 12.5 mOhms | - 400 mV | 103 nC | Enhancement |