- Mounting Style :
- Minimum Operating Temperature :
- Packaging :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.8 A (1)
- - 130 mA (1)
- - 340 mA (1)
- - 350 mA (1)
- - 8 A (2)
- - 80 mA (1)
- 10 A (4)
- 115 mA (1)
- 120 mA (1)
- 200 mA (7)
- 280 mA (1)
- 3.75 A (1)
- 3.8 A (1)
- 300 mA (1)
- 340 mA (2)
- 380 mA (2)
- 4 A (1)
- 4.4 A (1)
- 4.5 A (1)
- 400 mA (2)
- 5 A (1)
- 5.1 A (3)
- 500 mA (5)
- 6 A (6)
- 6.4 A (1)
- 6.5 A (1)
- 7 A (1)
- 7.5 A (6)
- 9 A (1)
- 900 mA (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
59 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSF... | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.2 Ohms | Enhancement | ||||||||||
|
|
179,622
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 115mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 mA | 1.2 Ohms | Enhancement | ||||||
|
|
69,159
In-stock
|
Fairchild Semiconductor | MOSFET SOT-23 N-CH ENHANCE | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 280 mA | 1.2 Ohms | Enhancement | ||||||
|
|
46,129
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||||
|
|
4,733
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.8 A | 1.2 Ohms | Enhancement | ||||||
|
|
5,500
In-stock
|
Fairchild Semiconductor | MOSFET PT5 150/25V Pch PowerTrench MOSFET | 25 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 80 mA | 1.2 Ohms | - 3.3 V | 2.9 nC | Enhancement | PowerTrench | |||
|
|
5,805
In-stock
|
Fairchild Semiconductor | MOSFET PT5 150V/25V Pch PowerTrench Mosfet | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 1.8 A | 1.2 Ohms | - 3.2 V | 2.8 nC | Enhancement | PowerTrench | |||
|
|
13,233
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 900 mA | 1.2 Ohms | 5.5 V | 4.5 nC | |||||
|
|
1,326
In-stock
|
STMicroelectronics | MOSFET N-Ch, 700V-1ohm Zener SuperMESH 7.5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.5 A | 1.2 Ohms | 3.75 V | 48 nC | Enhancement | ||||
|
|
2,952
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||
|
|
33,260
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.95 Ohm 6A MDmesh K5 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | Enhancement | ||||
|
|
10,801
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 10 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 400 mA | 1.2 Ohms | Enhancement | ||||||
|
|
106,800
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V 0.95Ohm 6A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | |||||
|
|
22,748
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel Sm Sig | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | |||||||
|
|
14,712
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | ||||||
|
|
7,371
In-stock
|
Fairchild Semiconductor | MOSFET -20V Dual P-Channel Spec PwrTrch MOSFET | 8 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 350 mA | 1.2 Ohms | Enhancement | PowerTrench | |||||
|
|
2,225
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 4.5 A | 1.2 Ohms | Enhancement | ||||||
|
|
736
In-stock
|
STMicroelectronics | MOSFET N-Ch, 650V-1ohm Zener SuperMESH 6.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.4 A | 1.2 Ohms | 3.75 V | 41 nC | Enhancement | ||||
|
|
813
In-stock
|
STMicroelectronics | MOSFET N-Ch 800V .95Ohm 6A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 6 A | 1.2 Ohms | 4 V | 13.4 nC | ||||||
|
|
696
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.2 Ohms | 41 nC | Enhancement | |||||
|
|
2,375
In-stock
|
STMicroelectronics | MOSFET N-CH 525 V 4.4 A SuperMESH3 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.2 Ohms | 17 nC | ||||||
|
|
11,914
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||||
|
|
3,160
In-stock
|
Fairchild Semiconductor | MOSFET N-CHANNEL 60V 200mA | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 200 mA | 1.2 Ohms | Enhancement | ||||||
|
|
7,611
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | ||||||
|
|
3,564
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement | ||||||
|
|
3,688
In-stock
|
Fairchild Semiconductor | MOSFET Dual P-Ch FET Enhancement Mode | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 340 mA | 1.2 Ohms | Enhancement | ||||||
|
|
898
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 1.2 Ohms | Enhancement | ||||||
|
|
3,532
In-stock
|
Diodes Incorporated | MOSFET 350mW 30Vdss | 10 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 300 mA | 1.2 Ohms | Enhancement | ||||||
|
|
5,656
In-stock
|
Diodes Incorporated | MOSFET 350mw 30V DUAL | 10 V | SMD/SMT | SOT-353-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 400 mA | 1.2 Ohms | Enhancement | ||||||
|
|
3,048
In-stock
|
Fairchild Semiconductor | MOSFET N-Ch Enhancement Mode Field Effect | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Ammo Pack | 1 Channel | Si | N-Channel | 60 V | 500 mA | 1.2 Ohms | Enhancement |
