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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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816
In-stock
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IXYS | MOSFET 12 Amps 1200V 1.15 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.35 Ohms | 6.5 V | 103 nC | Enhancement | Polar, HiPerFET | ||||
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1,151
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 7.2 Amp | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 7.2 A | 1.35 Ohms | 34 nC | Enhancement | ||||||
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5,070
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | |||||
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56,390
In-stock
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Fairchild Semiconductor | MOSFET 200V Single | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 850 mA | 1.35 Ohms | Enhancement | |||||||
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913
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | |||||
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534
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 7.2 Amp | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 7.2 A | 1.35 Ohms | 34 nC | Enhancement | ||||||
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1,084
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 3.8 A | 1.35 Ohms | Enhancement | QFET | ||||||
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100
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 950 V 1.1 7.2 A TO-220 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 7.2 A | 1.35 Ohms | 34 nC | Enhancement | ||||||
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198
In-stock
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Toshiba | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.35 Ohms | 4 V | 32 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET N-Ch MOS 5.5A 450V 35W 490pF 1.35 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 450 V | 5.5 A | 1.35 Ohms | ||||||||||||
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865,200
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | |||||
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915
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh |