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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | |
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297
In-stock
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Toshiba | MOSFET N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm | SMD/SMT | TO-220FP-3 | 1 Channel | Si | N-Channel | 650 V | 5 A | 1.43 Ohms |
