- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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500
In-stock
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 108 mOhms | 3 V | 27 nC | Enhancement | ||||
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3,603
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | CoolMOS | ||||||
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930
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
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4,720
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | ||||
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805
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 28 A | 108 mOhms | Enhancement | UniFET | |||||
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627
In-stock
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Fairchild Semiconductor | MOSFET 250V, 0.11OHM, 25.5A, N-CH MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25.5 A | 108 mOhms | 4.1 V | 45 nC | UltraFET | ||||
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480
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
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313
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
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2,186
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | OptiMOS | |||
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1,219
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.2 A | 108 mOhms | 4.3 nC | PowerTrench | |||||||
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121
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET SupreMOS | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 108 mOhms | SupreMOS | ||||||||
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4,566
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 35 V | 3 A | 108 mOhms | |||||||
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410
In-stock
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Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 108mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 108 mOhms | 82 nC | Enhancement | ||||||
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2,796
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V, 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 1.5 A, 1.5 A | 108 mOhms | 700 mV | 800 pC | Enhancement | ||||
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2,955
In-stock
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Toshiba | MOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A | 20 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 4 A | 108 mOhms | 400 mV | 3.6 nC | Enhancement |
