- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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16,905
In-stock
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Texas instruments | MOSFET -20V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 ... | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 840 mOhms | - 1.2 V | 0.7 nC | Enhancement | PicoStar | |||
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4,172
In-stock
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Toshiba | MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 8 V | SMD/SMT | SOT-416-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 8 A | 840 mOhms | 0.4 V to 1 V | 1 nC | |||||
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9,125
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V | 8 V | SMD/SMT | CST3-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.4 A | 840 mOhms | 400 mV | 1 nC | Enhancement | ||||
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92
In-stock
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Toshiba | MOSFET N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm | SMD/SMT | TO-220FP-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 8 A | 840 mOhms |
