- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,358
In-stock
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Diodes Incorporated | MOSFET MOSFET P-CHAN | +/- 8 V, +/- 8 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 6.04 A, - 6.04 A | 23 mOhms, 23 mOhms | - 1 V, - 1 V | 15.4 nC, 15.4 nC | Enhancement | ||||
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9,000
In-stock
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Texas instruments | MOSFET CSD85301Q2 Dual N- Channel Power MOSFET | 10 V, 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 8 A | 23 mOhms, 23 mOhms | 600 mV, 600 mV | 5.4 nC, 5.4 nC | Enhancement | NexFET |
