- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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9,679
In-stock
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Diodes Incorporated | MOSFET MOSFET DUAL N-CHAN ENHANCE MODE | 12 V, 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 7.63 A, 7.63 A | 19 mOhms, 19 mOhms | 500 mV, 500 mV | 15.6 nC, 15.6 nC | Enhancement | |||
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5,000
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET DUAL N-CHAN | 12 V, 12 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 6.7 A, 6.7 A | 19 mOhms, 19 mOhms | 500 mV, 500 mV | 5.2 nC, 5.2 nC | Enhancement | |||
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15,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | 8 V, 8 V | SMD/SMT | TSSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 4.9 A, 4.9 A | 19 mOhms, 19 mOhms | 500 mV, 500 mV | 9.6 nC, 9.6 nC | Enhancement |
