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- Mounting Style :
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
429,600
In-stock
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Fairchild Semiconductor | MOSFET N-Channel 600V 4A | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4 A | 1.65 Ohms | |||||||
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769
In-stock
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Fairchild Semiconductor | MOSFET 600V, N-Channel MOSFET, UniFET-II | 25 V | Through Hole | TO-220FP-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.65 Ohms | 3 V to 5 V | 10 nC | UniFET | |||||
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502
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel FRFET, Ultra FRFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 4 A | 1.65 Ohms | 5 V | 11 nC | UniFET FRFET | ||||||
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75
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFETs | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 5 A | 1.65 Ohms | 5 V | 6.9 nC | Enhancement | Polar3, HiperFET | ||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET, UniFET-II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.65 Ohms | 5 V | 10 nC | UniFET | ||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | Through Hole | TO-252-3 | Tube | Si | N-Channel | 500 V | 5 A | 1.65 Ohms | HyperFET | ||||||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 500 V | 5 A | 1.65 Ohms | HyperFET |
