- Mounting Style :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
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14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,033
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | Through Hole | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 16 A | 73 mOhms | 208 nC | Depletion | ||||||
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798
In-stock
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Fairchild Semiconductor | MOSFET 47A, 600V SuperFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 73 mOhms | Enhancement | SuperFET FRFET | ||||||
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6,421
In-stock
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IR / Infineon | MOSFET 80V DUAL N-CH HEXFET 73mOhm VGS 10V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 15 nC | Enhancement | ||||||
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1,903
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 80V 3.6A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 80 V | 3.6 A | 73 mOhms | 4 V | 15 nC | ||||||
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1,727
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 35 V | 6 A | 73 mOhms | 1.2 V | 10 nC | Enhancement | ||||||
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3,465
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.3 A | 73 mOhms | 8.6 nC | Enhancement | ||||||
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49
In-stock
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Toshiba | MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | ||||||
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48
In-stock
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Toshiba | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 7.7 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | ||||||
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6,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | DTMOSIV | |||||
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24
In-stock
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Toshiba | MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | |||||
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26
In-stock
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Toshiba | MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | |||||
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56,740
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 N-CH 60V | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.7 A | 73 mOhms | Enhancement | PowerTrench | ||||||
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59
In-stock
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IXYS | MOSFET 52 Amps 300V 0.066 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 52 A | 73 mOhms | 5 V | 110 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | Toshiba | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement |