- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,135
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | ||||
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5,095
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC | 16 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 88 A | 9.9 mOhms | 2.5 V | 44 nC | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | |||||
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446
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | ||||
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469
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | ||||
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457
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | ||||
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981
In-stock
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Texas instruments | MOSFET CSD83325L, Dual N-Ch nel NexFET? | 10 V | SMD/SMT | BGA-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 8 A | 9.9 mOhms | 0.95 V | 8.4 nC | NexFET | |||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET PTNG 100/20V Nch Power Trench Mosfet | +/- 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 51 A | 9.9 mOhms | 2 V | 21 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 69 A | 9.9 mOhms | 1.2 V | 58 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.6mOhms 9.3nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.9 mOhms | 1.35 V to 2.35 V | 9.3 nC | Enhancement |