- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,682
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 31 A | 13.8 mOhms | 2 V | 10 nC | Enhancement | OptiMOS | |||
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2,290
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 13.8 mOhms | 2.25 V | 7 nC | Enhancement | ||||
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194
In-stock
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Toshiba | MOSFET N-Ch PWR FET 52A 72W 100V VDSS | 10 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 52 A | 13.8 mOhms | |||||||||
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7,850
In-stock
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Toshiba | MOSFET P-Ch MOS -50A -60V 90W 6290pF 0.0138 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 50 A | 13.8 mOhms | ||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 31 A | 13.8 mOhms | 2 V | 10 nC | Enhancement | OptiMOS |
