- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,125
In-stock
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onsemi | MOSFET NCH+NCH 23A 20V 4.4M OHM | 12 V, 12 V | SMD/SMT | CSP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 4.2 mOhms, 4.2 mOhms | 500 mV, 500 mV | 27 nC, 27 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | 20 V, 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A TISON-8 | +/- 20 V, +/- 20 V | SMD/SMT | TISON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 40 A, 40 A | 4.2 mOhms, 4.2 mOhms | 1.2 V, 1.2 V | 17 nC, 17 nC | Enhancement | OptiMOS |
