- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,909
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 15A VSON-4 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
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7,094
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 N-CH 20V | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.9 A | 115 mOhms | Enhancement | PowerTrench | |||||
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25,000
In-stock
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Fairchild Semiconductor | MOSFET -30V -3A 115 OHM PoserTrench MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 115 mOhms | Enhancement | PowerTrench | |||||
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4,917
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 11 A | 115 mOhms | Enhancement | ||||||
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3,933
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 11 A | 115 mOhms | Enhancement | ||||||
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3,880
In-stock
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IR / Infineon | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | ||||||||
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52,400
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 10 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13 A | 115 mOhms | Enhancement | ||||||
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1,271
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 115 mOhms | 4 V | 44 nC | |||||
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2,765
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | ||||
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2,975
In-stock
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Diodes Incorporated | MOSFET PMOS-SINGLE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 115 mOhms | Enhancement | ||||||
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2,470
In-stock
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Diodes Incorporated | MOSFET PMOS-DUAL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.4 A | 115 mOhms | Enhancement | ||||||
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3,745
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | ||||
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3,410
In-stock
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Nexperia | MOSFET P-CH -20 V -2 A | SMD/SMT | SOT-363-6 | Reel | Si | P-Channel | - 20 V | - 2 A | 115 mOhms | 7.2 nC | ||||||||||
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161
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement | |||||
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5,160
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 11 A | 115 mOhms | Enhancement | ||||||
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27,000
In-stock
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Fairchild Semiconductor | MOSFET SSOT-6 P-CH DUAL | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 115 mOhms | Enhancement | PowerTrench | |||||
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36,214
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 P-CH -20V | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 115 mOhms | Enhancement | PowerTrench | |||||
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2,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 52 Amps 600V 0.12 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 115 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 52 Amps 600V 0.12 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 115 mOhms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET 650V CoolMOS C7 Power Trans; 130mOhm | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS |
