- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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4,520
In-stock
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Wolfspeed | MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT | - 5 V, + 20 V | Tube | 1 Channel | 208 W | N-Channel | 1.2 kV | 31.6 A | 98 mOhms | 4 V | 71 nC | TO-247 | 30 | Green available | |||||||||
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6,476
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS N-Ch 60V 1.7A | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.6 A | 98 mOhms | Enhancement | UltraFET | |||||||||
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1,315
In-stock
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Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 5.3 A | 98 mOhms | 19 nC | Enhancement | |||||||||
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63,300
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL PCh -20V 5.3A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 5.3 A | 98 mOhms | 19 nC | ||||||||||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.5 A | 98 mOhms | - 3 V | 9.5 nC | Enhancement | ||||||||
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VIEW | Toshiba | MOSFET N-Ch 40V FET 5.3A 2.2W 225pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 40 V | 5.3 A | 98 mOhms |
