- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
41 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,058
In-stock
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Fairchild Semiconductor | MOSFET SuperSOT-3 | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 21 mOhms | Enhancement | PowerTrench | |||||
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1,570
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V Nch Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 100 V | 43 A | 21 mOhms | 2 V | 15 nC | PowerTrench Power Clip | |||||
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1,439
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
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1,856
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | SIPMOS | |||
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2,574
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 21 mOhms | 52 nC | Enhancement | |||||
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590
In-stock
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IXYS | MOSFET LinearL2 Powr MOSFET w/extended FBSOA | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | |||||||
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4,774
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 9A 17mOhm 15nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 9 A | 21 mOhms | 15 nC | ||||||||
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3,520
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7.6 A | 21 mOhms | 7.7 nC | PowerTrench | |||||
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2,221
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 6 A | 21 mOhms | PowerTrench | |||||||
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1,432
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 52 A | 21 mOhms | Enhancement | QFET | |||||
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1,653
In-stock
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Fairchild Semiconductor | MOSFET P-CHANNEL MOSFET | +/- 20 V | SMD/SMT | SO-8 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 11 A | 21 mOhms | - 1.4 V | 56 nC | PowerTrench | |||||
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2,319
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 8A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 21 mOhms | 52 nC | ||||||||
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652
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 80A D2PAK-2 | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | ||||
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8,234
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 3.8A SOT-23-3 | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.8 A | 21 mOhms | Enhancement | ||||||
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1,780
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -9.1A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.1 A | 21 mOhms | - 40 nC | Enhancement | OptiMOS | ||||
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1,363
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -8.2A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8.2 A | 21 mOhms | - 36 nC | Enhancement | OptiMOS | ||||
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846
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -80A TO220-3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 80 A | 21 mOhms | - 4 V | 173 nC | Enhancement | ||||
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2,765
In-stock
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Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 36 A | 21 mOhms | - 2.5 V | 100 nC | Enhancement | ||||
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3,500
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 13.7 A | 21 mOhms | 1 V | 12.9 nC | Enhancement | ||||
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2,199
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 8.2 A | 21 mOhms | - 26 nC | Enhancement | OptiMOS | ||||
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4,952
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.47 A | 21 mOhms | 5.4 nC | ||||||
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924
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 52.4 A | 21 mOhms | Enhancement | QFET | |||||
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104
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Chan Pwr Clip PowerTrench MOSFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 43 A | 21 mOhms | 2.9 V | 15 nC | PowerTrench Power Clip | |||||
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2,313
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 26.5mOhm 10V 5.8A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 600 mV | 20 nC | Enhancement | ||||
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4,759
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 12Vgss 30A | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 21 mOhms | 900 mV | 8.5 nC | Enhancement | ||||
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85
In-stock
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IXYS | MOSFET LINEAR L2 SERIES MOSFET 100V 75A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 2.5 V to 4.5 V | 215 nC | Enhancement | ||||
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1,233
In-stock
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onsemi | MOSFET NFET DPAK 30V 38A 11MOHM | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 11.6 A | 21 mOhms | 2.5 V | 8.2 nC | ||||||||
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54
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT | |||
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844
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgs 641pF 13.2nC | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 21 mOhms | 1 V | 13.2 nC | Enhancement | ||||
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35
In-stock
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IXYS | MOSFET 75 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | 5.5 V | 74 nC | Enhancement | PolarHT |
