- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
27 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,944
In-stock
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Fairchild Semiconductor | MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET | 25 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 44 mOhms | Enhancement | PowerTrench | |||||
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8,901
In-stock
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Fairchild Semiconductor | MOSFET 40V P-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6.7 A | 44 mOhms | Enhancement | PowerTrench | |||||
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29,580
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 47.3 nC | ||||||||
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5,976
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.4 A | 44 mOhms | Enhancement | UltraFET | |||||
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4,180
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V | 4.7 A | 44 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
7,983
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 18A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.3 A | 44 mOhms | Enhancement | OptiMOS | ||||
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499
In-stock
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IXYS | MOSFET -90.0 Amps -200V 0.044 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 90 A | 44 mOhms | |||||||
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3,985
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS P-Ch 40V 6.7A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 14 A | 44 mOhms | Enhancement | PowerTrench | |||||
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1,607
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 4 V | 47.3 nC | Enhancement | ||||
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2,326
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 32A 44mOhm 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 4 V | 71 nC | |||||
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8,142
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 44 mOhms | 1.2 V | 1.5 nC | Enhancement | ||||
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14,400
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 47.3 nC | ||||||||
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1,119
In-stock
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onsemi | MOSFET POWER MOSFET | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 10 A | 44 mOhms | - 1 V | 1.7 nC | ||||||
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2,483
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch 44mOhm 10V VGS 5.0A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5 A | 44 mOhms | 3 V | 22.4 nC | Enhancement | ||||
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579
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 2 V to 4 V | 47.3 nC | Enhancement | ||||
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248
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 44 mOhms | 2 V | 12 nC | Enhancement | ||||
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523
In-stock
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onsemi | MOSFET 100V HD3E NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 44 mOhms | 2 V | 35 nC | |||||
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71,500
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 33A 44mOhm 47.3nC | 20 V | Through Hole | TO-220 | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 47.3 nC | ||||||||
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1,078
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 48nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 44 mOhms | 48 nC | Enhancement | |||||
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59
In-stock
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IXYS | MOSFET -90.0 Amps -200V 0.044 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 90 A | 44 mOhms | - 4 V | 205 nC | Enhancement | PolarP | |||
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160,400
In-stock
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Texas instruments | MOSFET 12V P-channel NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.2 A | 44 mOhms | - 900 mV | 3.8 nC | Enhancement | NexFET | |||
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889
In-stock
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Texas instruments | MOSFET 12V N-Channel FemtoFET MOSFET | 10 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 2.9 A | 44 mOhms | 1 V | 2 nC | Enhancement | FemtoFET | |||
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25,300
In-stock
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Infineon Technologies | MOSFET MOSFT 36A 49.3nC 44mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 36 A | 44 mOhms | 2 V | 49.3 nC | |||||
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3,998
In-stock
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onsemi | MOSFET -20V -6A P-Channel | 8 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 44 mOhms | Enhancement | ||||||
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1,495
In-stock
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onsemi | MOSFET Pwr MOSFET 60V 20A 44mOhm Dual N-CH | SO-FL-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 20 A | 44 mOhms | |||||||||||
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VIEW | onsemi | MOSFET Pwr MOSFET 60V 20A 44mOhm Dual N-CH | SO-FL-8 | Reel | 2 Channel | Si | N-Channel | 60 V | 20 A | 44 mOhms | |||||||||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 26 A | 44 mOhms | 2 V | 22 nC | Enhancement |
