- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,240
In-stock
|
Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | ||||
|
573
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | ||||
|
585
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 V 0.067 Ohm 35 A MDmesh(TM) | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 67 mOhms | 4 V | 82 nC | Enhancement | MDmesh | ||||
|
385
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | ||||
|
254
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-3PF-3 | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 67 mOhms | 3 V | 82 nC | Enhancement | |||||||
|
5,041
In-stock
|
Fairchild Semiconductor | MOSFET -20V P-Channel 1.5V PwrTrh WL-CSP MOSFET | 8 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 67 mOhms | Enhancement | PowerTrench | ||||||
|
254
In-stock
|
Fairchild Semiconductor | MOSFET PT5 100V/25V Pch Power Trench Mosfet | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.4 A | 67 mOhms | PowerTrench | ||||||||
|
303
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 67 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | ||||
|
90
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | ||||
|
4,916
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | |||||
|
5,327
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | |||||
|
482
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | ||||
|
VIEW | Toshiba | MOSFET MOSFET N-Ch 100V 18A Rdson=0.067Ohm | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 18 A | 67 mOhms | Enhancement |