- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
28 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,750
In-stock
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Nexperia | MOSFET PMV65XP/TO-236AB/REEL 11" Q3/T | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.3 A | 58 mOhms | - 900 mV | 7.7 nC | Enhancement | ||||
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900
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 29.7 A | 58 mOhms | 5 V | 210 nC | |||||
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4,352
In-stock
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IR / Infineon | MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | - 3 V | 23 nC | Enhancement | ||||
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8,175
In-stock
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Fairchild Semiconductor | MOSFET -30V P-CHANNEL | 25 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | Enhancement | PowerTrench | |||||
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2,355
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | 23 nC | Enhancement | |||||
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798
In-stock
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Fairchild Semiconductor | MOSFET TO220F, 250V, NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 58 mOhms | 5 V | 47 nC | Enhancement | UniFET | |||
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899
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 100V 11A 5-Pin | 20 V | Through Hole | TO-220FP-5 | - 55 C | Tube | 2 Channel | Si | N-Channel | 100 V | 11 A | 58 mOhms | 12 nC | Enhancement | ||||||
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228
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3.5 V | 64 nC | Enhancement | CoolMOS | |||
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235
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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840
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 27 A | 58 mOhms | 5 V | 21 nC | |||||
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2,762
In-stock
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onsemi | MOSFET PCH+NCH 4V DRIVE SERIES | 20 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 5.5 A | 58 mOhms | 13 nC | ||||||
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1,992
In-stock
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IR / Infineon | MOSFET Automotive FET 55V 7A 58mOhm | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 16 A | 58 mOhms | 6.6 nC | |||||||||
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1,893
In-stock
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IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 58mOhms 22nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.5 A | 58 mOhms | - 1 V, 1 V | 22 nC | Enhancement | ||||
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973
In-stock
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Infineon Technologies | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 7.3 A | 58 mOhms | - 1 V, 1 V | 22 nC | Enhancement | ||||
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2,155
In-stock
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onsemi | MOSFET NFET 20V 3A 70MOHM TSOP6 | 12 V | SMD/SMT | TSOP-6 | - 50 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 58 mOhms | Enhancement | ||||||
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115
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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8,730
In-stock
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Texas instruments | MOSFET 100V, 49mOhm SON2x2 NexFET Power MOSFET 6-WSON ... | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 58 mOhms | 2.8 V | 5.6 nC | Enhancement | NexFET | |||
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740
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 t... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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2,063
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 t... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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326
In-stock
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Texas instruments | MOSFET 100V, 49mOhm NexFET Power MOSFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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23,997
In-stock
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Nexperia | MOSFET P-CH TRENCH 20V | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 58 mOhms | Enhancement | ||||||
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240
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 145A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 145A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel, NPN | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS |
