- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Applied Filters :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,360
In-stock
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Fairchild Semiconductor | MOSFET Dual PCh Digital | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 500 mA | 780 mOhms | Enhancement | |||||||
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27,700
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | |||
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9,023
In-stock
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Nexperia | MOSFET N-CH TRENCH DL 60V | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 490 mA | 780 mOhms | Enhancement | |||||||
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1,448
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||||
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3,422
In-stock
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Fairchild Semiconductor | MOSFET Dual PCh Digital | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 500 mA | 780 mOhms | Enhancement | |||||||
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579
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||||
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880
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||||
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353
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.72Ohm 55A MDMesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.5 A | 780 mOhms | 3 V | 10 nC | ||||||
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398
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS |