- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Applied Filters :
52 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,234
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 200V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3 A | 130 mOhms | Enhancement | PowerTrench | |||||
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2,138
In-stock
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Fairchild Semiconductor | MOSFET N-CH 200V 18A Q-FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.6 A | 130 mOhms | Enhancement | PowerTrench | |||||
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770
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V, 130mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 130 mOhms | 3.5 V | 54 nC | SuperFET II | ||||
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1,288
In-stock
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IXYS | MOSFET TenchP Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | - 4 V | 180 nC | Enhancement | ||||
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738
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
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983
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 24 A | 130 mOhms | 3 V | 43 nC | Enhancement | |||||
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2,106
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 13.86 A | 130 mOhms | 4 V | 62.5 nC | |||||||
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1,961
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II | 25 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 22 A | 130 mOhms | 4 V | 62.5 nC | |||||||
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49,860
In-stock
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onsemi | MOSFET 30V P-Ch PowerTrench | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 130 mOhms | Enhancement | PowerTrench | |||||
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2,943
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | - 3 V | 27 nC | |||||
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4,940
In-stock
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Fairchild Semiconductor | MOSFET SO-8 SGL P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.5 A | 130 mOhms | Enhancement | ||||||
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2,539
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 130 mOhms | Enhancement | PowerTrench | |||||
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3,582
In-stock
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Fairchild Semiconductor | MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 130 mOhms | 3 V | 16 nC | Enhancement | ||||
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3,439
In-stock
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STMicroelectronics | MOSFET N Ch 100V 0.115 OHM 15A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 130 mOhms | Enhancement | ||||||
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528
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 23A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | |||
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5,905
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 130 mOhms | - 4 V | 6.4 nC | Enhancement | ||||
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2,627
In-stock
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onsemi | MOSFET PFET 60V 15.5A 130R | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15.5 A | 130 mOhms | - 2 V | 26 nC | Enhancement | ||||
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1,251
In-stock
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Diodes Incorporated | MOSFET 20V P-Chnl HDMOS | 12 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.5 A | 130 mOhms | Enhancement | ||||||
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2,346
In-stock
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Diodes Incorporated | MOSFET 70V N-Channel 6.1A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 6.1 A | 130 mOhms | Enhancement | ||||||
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2,825
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.13 Ohm 3A STripFET VI | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | 2 V | 6.4 nC | Enhancement | STripFET | |||
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156
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V, 130mohm | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 130 mOhms | 3.5 V | 54 nC | Enhancement | SuperFET II | |||
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3,384
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 70mOhms 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | 27 nC | Enhancement | |||||
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664
In-stock
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Infineon Technologies | MOSFET P-Ch -60V -18.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 18.7 A | 130 mOhms | - 21 nC | SIPMOS | |||||
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1,513
In-stock
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Diodes Incorporated | MOSFET 70V N-Channel 3.8A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 3.8 A | 130 mOhms | Enhancement | ||||||
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4,288
In-stock
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onsemi | MOSFET NCH 4V Power MOSFET | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 130 mOhms | 400 mV | 4.7 nC | Enhancement | ||||
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40
In-stock
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IXYS | MOSFET DIODE Id44 BVdass600 | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 44 A | 130 mOhms | Enhancement | HyperFET | |||||
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20
In-stock
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IXYS | MOSFET 600V 38A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 130 mOhms | Enhancement | HyperFET | |||||
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34
In-stock
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IXYS | MOSFET 600V 44A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 44 A | 130 mOhms | 4.5 V | 330 nC | Enhancement | HyperFET | |||
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98
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 24 A | 130 mOhms | 3 V | 43 nC | Enhancement | ||||
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2,500
In-stock
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onsemi | MOSFET NFET DPAK 25V 14A 95MO | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 28 V | 14 A | 130 mOhms |
